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Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 × 2 surface: A high-resolution core-level photoemission study
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10.1063/1.4807400
/content/aip/journal/jap/113/20/10.1063/1.4807400
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807400
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scans of In 4d, Ga 3d, As 3d, and Al 2p core levels for 1 and 10 pulses of TMA followed by the water pulse.

Image of FIG. 2.
FIG. 2.

A fit to the As 3d core levels excited with a photon energy of 95 eV; (a) clean and θ = 0°, (b) clean and θ = 60°, (c) 1 pulse of TMA and θ = 0°, (d) 1 pulse of TMA and θ = 60°, (e) 1 pulse of TMA+1 pulse of HO and θ = 0°, (f) 10 pulses of TMA and θ = 0°, (g) 10 pulses of TMA and θ = 60°, and (h) 10 pulses of TMA+1 pulse of HO and θ = 0°. The symbol θ indicates the emission angle. Raw data are indicated using dots, and solid lines are the fit results. The insets for (c) and (f) show the corresponding deconvolution curve.

Image of FIG. 3.
FIG. 3.

A fit to the Ga 3d and In 4d core levels excited with a photon energy of 95 eV and in normal emission; (a) clean surface, (b) side view of a clean surface, β3′(4 × 2) model (Ref. ), (c) 1 pulse of TMA, (d) 10 pulses of TMA, (e) 1 pulse of TMA + 1 pulse of HO, and (f) 10 pulses of TMA + 1 pulse of HO. Raw data are indicated using dots, and solid lines are the fit results.

Image of FIG. 4.
FIG. 4.

A fit to the Al 2p core levels excited with a photon energy of 120 eV and in normal emission; (a) the measured data, (b) 1 pulse of TMA, (c) 1 pulse of TMA + 1 pulse of HO, (d) 10 pulses of TMA, and (e) 10 pulses of TMA + 1 pulse of HO. Raw data are indicated using dots, and solid lines are the fit results.

Image of FIG. 5.
FIG. 5.

Schematics for the As-Al and In/Ga-Al bonds: (a) In-As removed; (b) Al(III) as TMA; (c) Al(I) as MMA; (d) Al(II) as DMA; (e) As-Al-OH; (f) (In/Ga)-OH and As-OH.

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/content/aip/journal/jap/113/20/10.1063/1.4807400
2013-05-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 × 2 surface: A high-resolution core-level photoemission study
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807400
10.1063/1.4807400
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