(a) Raman spectra of μc-Si:H films fabricated with different SR. Insert shows Fc as a function of SR and the corresponding result using typical ICP for comparison. (b) A schematic decomposition of the Raman spectrum of the sample deposited at SR of 5.
X-ray diffraction spectra of μc-Si:H films deposited on quartz substrates with different SR.
FTIR spectra of μc-Si:H films deposited on double polished Si substrates with different SR. Inset shows the calculated hydrogen concentration vs. SR.
(a) The relation of Photo-, dark-conductivity, and photosensitivity of μc-Si:H films with SR. (b) Photo-, dark-conductivity, and photosensitivity of μc-Si:H films as a function of Fc .
The relation of open circuit voltage of the glass/ZnO:Al/p-i-n/ZnO:Al solar cells with the Fc of the intrinsic layer.
Calculated value of Fc , Fg , and crystalline peak position of μc-Si:H thin films deposited with various SR.
FWHM of (220) and (111) diffraction peaks, and the ratio of intensity of (220) to (111) peaks of μc-Si:H thin films deposited with various SR.
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