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Characteristics of ultrafast optical responses originating from non-equilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures
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10.1063/1.4807405
/content/aip/journal/jap/113/20/10.1063/1.4807405
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807405
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the measurement system for time-resolved reflection-type pump-probe spectroscopy. A single monochromator was used to analyze the probe light after reflection by the sample.

Image of FIG. 2.
FIG. 2.

Time-resolved reflectivity changes without resolving the spectral profile of the probe light in (a) the -GaAs ( nm)/-GaAs with  = 200, 500, and 1200 nm and the -GaAs bulk samples and (b) the -GaAs bulk sample at room temperature. All the signals are normalized by the peak values. The solid curves depicted in (a) show the fitted results.

Image of FIG. 3.
FIG. 3.

Image maps of the detection energy dependence of the reflectivity change as a function of time delay in (a) the -GaAs (500 nm)/-GaAs and (b) the -GaAs (200 nm)/-GaAs samples at room temperature. The dashed curve shows the spectrum of the probe light.

Image of FIG. 4.
FIG. 4.

Time-resolved reflectivity changes (circles) of (a) the -GaAs (500 nm)/-GaAs and (b) the -GaAs (200 nm)/-GaAs samples at various detection energies of the probe light at room temperature, where each signal is normalized by the peak value. The solid curves show the fitted results and the dashed curves in (a) show the calculated fast decay components.

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/content/aip/journal/jap/113/20/10.1063/1.4807405
2013-05-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of ultrafast optical responses originating from non-equilibrium carrier transport in undoped GaAs/n-type GaAs epitaxial structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807405
10.1063/1.4807405
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