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Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy
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10.1063/1.4807646
/content/aip/journal/jap/113/20/10.1063/1.4807646
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807646

Figures

Image of FIG. 1.
FIG. 1.

High-resolution x-ray photoelectron spectra of the valence-band region measured on thick films of (a) ZnP, (b) ZnSe, (c) CdS, and (d) ZnO. For each material, the calculated VB-DOS are displayed before and after convolution with the spectrometer response function. The insets show the VBM position determined by fitting the convolved VB-DOS to the XPS data.

Image of FIG. 2.
FIG. 2.

Fitted XPS data of the (a) P 2 and (b) Se 3 core levels measured on ultrathin ZnSe/ZnP heterojunction interfaces of increasing ZnSe overlayer thickness. (c) The energy-band alignment for an n-ZnSe/p-ZnP heterojunction interface calculated given the measured ΔE and assumed doping levels of n = 1 × 10 cm and p = 1 × 10 cm for ZnSe and ZnP, respectively.

Image of FIG. 3.
FIG. 3.

Fitted XPS data of the (a) P 2 and (b) S 2 core levels measured on ultrathin CdS/ZnP heterojunction interfaces of increasing CdS overlayer thickness. (c) The energy-band alignment foran n-CdS/p-ZnP heterojunction interface calculated given the measured ΔE and assumed doping levels of n = 1 × 10 cm and p = 1 × 10 cm for CdS and ZnP, respectively.

Image of FIG. 4.
FIG. 4.

(a) Fitted XPS data of the Zn 3 core level for sputter-deposited ZnO/ZnP heterojunction interfaces with increasing ZnO thickness. The interface peaks show contributions from both the phosphide and oxide states. (b) The energy-band alignment for an n-ZnO/p-ZnP heterojunction interface calculated given the measured ΔE and assumed doping levels of n = 1 × 10 cm and p = 1 × 10 cm for ZnO and ZnP, respectively.

Image of FIG. 5.
FIG. 5.

A comparison of experimentally measured II-VI/ZnP heterojunction band offsets with those predicted from the EA model, an effective interface dipole model, and universal hydrogen-level alignment calculations. The ZnS/ZnP band offset measurement has been reported previously. The CBM of ZnP was fixed at −3.6 eV with respect to the vacuum level based on the reported electron affinity.

Tables

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Table I.

Device properties of champion Schottky and heterojunction solar cells that utilized a ZnP photovoltaic absorber.

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Table II.

Core level fitting parameters and measured E − E values for the bulk ZnP and II-VI semiconductors.

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Table III.

Calculated effective mass values (m/m) for the three uppermost valence bands of ZnP as determined by parabolic fitting of the ZnP band diagram. ν corresponds to the highest energy, or “heavy hole,” valence band.

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/content/aip/journal/jap/113/20/10.1063/1.4807646
2013-05-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807646
10.1063/1.4807646
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