XRD pattern for a representative DyN thin film. The most prominent peak comes from the sapphire substrate. Peaks labelled  and  are contributed by strongly textured DyN.
Temperature dependent resistivity of a DyN thin film establishing the semiconducting nature of DyN.
Curie–Weiss plot for a DyN thin film illustrating the Curie temperature at 20 ± 1 K. Inset shows hysteresis curve for DyN at 5 K in its ferromagnetic state.
(a) Reflectance from the cap side, transmittance and sum of R and T from ≈ 300 nm thick DyN film (Film A) protected by a MgF2 capping layer. Transmission drops after 1.2 eV indicating the presence of an optical gap. Open circles are experimentally obtained spectra whereas solid lines represent fitted spectra. (b) Optical spectra for the same film showing reflectance and transmittance from the substrate side.
Imaginary part of the dielectric function depicts the fundamental absorption edge at 1.2 eV (indicated by an arrow) for a near-stoichiometric DyN film. The real part, on the other hand, shows weak spectral dependence.
Free carrier absorption (black solid circles) and the optical gap (blue solid squares) vs. N2/Dy flux ratio during growth. Films grown with low N2/Dy flux ratios (Films B and C from Table I ) show enhanced free carrier absorption and a significant Moss-Burstein shift. Clearly, the absorption in the subgap region is correlated to the increased optical energy gap.
Infrared reflectivity spectrum of a Y-stabilized ZrO2 substrate, a DyN thin film on a YSZ substrate capped by amorphous Si, and the fit to the data.
Real and imaginary parts of the complex dielectric function showing the polar phonon and nitrogen-vacancy donor to conduction band transition.
Growth parameters for various DyN thin films used for optical experiments.
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