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First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors
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10.1063/1.4807650
/content/aip/journal/jap/113/20/10.1063/1.4807650
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807650

Figures

Image of FIG. 1.
FIG. 1.

Hypothetical band diagram of a material with single-carrier (electron) avalanche multiplication. The successful ionization event (a) is caused by the primary electron 1, which transfers its excess energy to the electron 2 in the VB that results in creation of the secondary electron-hole pair 2–2′. The distinctive feature of this band structure is a limited width of the valence band (solid vs dashed line) that precludes holes (b) from gaining energy sufficiently high for the secondary electron-hole pair production.

Image of FIG. 2.
FIG. 2.

Chalcopyrite structure of CuAlSe.

Image of FIG. 3.
FIG. 3.

Band structure (a) of the CuAlSe chalcopyrite semiconductor plotted along the high-symmetry -points in tetragonal Brillouin zone (b). The notable feature is a separation of the uppermost valance band from the rest of valance states. The energies are plotted relative to the Fermi energy . The panel (c) illustrates hybridization resulted in appearance of the VB gap.

Image of FIG. 4.
FIG. 4.

Band structure of ternary chalcopyrite compounds. The notable feature is the separation of the uppermost valance band from the rest of valance states observed in CuAlTe (a) and CuGaSe (c), but not in AgAlSe (b). The inset on panel (b) shows schematically the hybridization in AgAlSe that results in vanishing of the gap between bonding and antibonding states forming the upper VB. The energies are plotted relative to the Fermi energy

Image of FIG. 5.
FIG. 5.

Structure of the CuAlGaSe random alloy.

Image of FIG. 6.
FIG. 6.

Band structure of CuAlGaSe random alloy plotted relative to the Fermi energy.

Image of FIG. 7.
FIG. 7.

Atom-specific projected density of states for the CuAlGaSe random alloy.

Image of FIG. 8.
FIG. 8.

Proposed device structure and energy-band diagram of Cu(AlGa)Se APD under a reverse bias

Tables

Generic image for table
Table I.

Energies (eV) of valence atomic orbitals for selected elements obtained with a relativistic local spin density approximation. The values in numerator and denominator correspond to the electron spin up/down.

Generic image for table
Table II.

Lattice parameters and (Å) and the optical energy gap (eV) of chalcopyrite compounds studied here.

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/content/aip/journal/jap/113/20/10.1063/1.4807650
2013-05-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807650
10.1063/1.4807650
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