RMS surface roughness of Si and GaAs wafers with initial values <0.1 nm and <0.2 nm, respectively, measured after argon (Ar_1, Ar_2) and helium (He_1, He_2) FAB treatments (see Table I ). The RMS roughness was determined using 500 × 500 nm2 and 2 × 2 μm2 scan fields.
Scanning acoustic microscopy images of 4 in. Si/GaAs wafer bonds initiated after 5 min of argon FAB treatment ((a) Ar_01, (b) Ar_02).
AFM images of GaAs and Si surfaces after fast atom beam treatment: (a) GaAs after 7.5 min Ar_1, (b) GaAs after 9.3 min He_1, (c) GaAs after 30 min He_1, (d) Si after 7.5 min Ar_1, (e) Si after 9.3 min He_1, (f) Si after 30 min He_1. Details of the FAB processes are provided in Table I . Note the difference in the vertical scale between the AFM images.
AFM characteristic line profiles for the Si and GaAs wafers after (a) 9.3 min and (b) 30 min of helium He_1 FAB exposure.
Current-voltage characteristics of n-Si/n-GaAs bonds treated with fast atom beams of differing energies, Ar_1, Ar_2 (see Table I ), and the reference samples (Si, GaAs). The curves were measured after alloying at 290 °C and after additional annealing at 400 °C for 1 min.
FAB parameters and the corresponding sputter rates for thermal silicon oxide determined in the middle of a 4 in. wafer.
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