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Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
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10.1063/1.4807905
/content/aip/journal/jap/113/20/10.1063/1.4807905
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807905

Figures

Image of FIG. 1.
FIG. 1.

RMS surface roughness of Si and GaAs wafers with initial values <0.1 nm and <0.2 nm, respectively, measured after argon (Ar_1, Ar_2) and helium (He_1, He_2) FAB treatments (see Table I ). The RMS roughness was determined using 500 × 500 nm and 2 × 2 m scan fields.

Image of FIG. 2.
FIG. 2.

Scanning acoustic microscopy images of 4 in. Si/GaAs wafer bonds initiated after 5 min of argon FAB treatment ((a) Ar_01, (b) Ar_02).

Image of FIG. 3.
FIG. 3.

AFM images of GaAs and Si surfaces after fast atom beam treatment: (a) GaAs after 7.5 min Ar_1, (b) GaAs after 9.3 min He_1, (c) GaAs after 30 min He_1, (d) Si after 7.5 min Ar_1, (e) Si after 9.3 min He_1, (f) Si after 30 min He_1. Details of the FAB processes are provided in Table I . Note the difference in the vertical scale between the AFM images.

Image of FIG. 4.
FIG. 4.

AFM characteristic line profiles for the Si and GaAs wafers after (a) 9.3 min and (b) 30 min of helium He_1 FAB exposure.

Image of FIG. 5.
FIG. 5.

Current-voltage characteristics of n-Si/n-GaAs bonds treated with fast atom beams of differing energies, Ar_1, Ar_2 (see Table I ), and the reference samples (Si, GaAs). The curves were measured after alloying at 290 °C and after additional annealing at 400 °C for 1 min.

Tables

Generic image for table
Table I.

FAB parameters and the corresponding sputter rates for thermal silicon oxide determined in the middle of a 4 in. wafer.

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/content/aip/journal/jap/113/20/10.1063/1.4807905
2013-05-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807905
10.1063/1.4807905
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