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Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
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10.1063/1.4807905
/content/aip/journal/jap/113/20/10.1063/1.4807905
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807905
/content/aip/journal/jap/113/20/10.1063/1.4807905
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/content/aip/journal/jap/113/20/10.1063/1.4807905
2013-05-28
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4807905
10.1063/1.4807905
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