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Structural and optical characterization of GaN nanowires
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10.1063/1.4808097
/content/aip/journal/jap/113/20/10.1063/1.4808097
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4808097
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional (a) and top view (b) HR-SEM images of GaN NWs grown on the Si(111) for sample A.

Image of FIG. 2.
FIG. 2.

Cross-sectional (a) and top view (b) HR-SEM images of GaN NWs grown on the Si(111) for sample B.

Image of FIG. 3.
FIG. 3.

Raman spectra for pure silicon (reference sample) as well as for samples A and B measured at room temperature.

Image of FIG. 4.
FIG. 4.

Raman spectra for pure silicon, samples A and B measured at room temperature presented in expanded scale. In the spectra, the redshift of Si mode for the sample B with respect to silicon reference sample and E2 (high) mode for samples A and B as well as the peak observed for the reference Si sample at 572 cm of unknown origin are shown.

Image of FIG. 5.
FIG. 5.

Room temperature photoluminescence spectra of GaN NWs for samples A and B.

Image of FIG. 6.
FIG. 6.

PL spectra for sample A deconvoluted into two Gaussian peaks.

Image of FIG. 7.
FIG. 7.

The intensity of PL spectra for both samples for various times of illumination by continuous laser (UV) light. A gradual decrease of PL intensity for longer illumination time is observed.

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/content/aip/journal/jap/113/20/10.1063/1.4808097
2013-05-30
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and optical characterization of GaN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/20/10.1063/1.4808097
10.1063/1.4808097
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