Cross-sectional (a) and top view (b) HR-SEM images of GaN NWs grown on the Si(111) for sample A.
Cross-sectional (a) and top view (b) HR-SEM images of GaN NWs grown on the Si(111) for sample B.
Raman spectra for pure silicon (reference sample) as well as for samples A and B measured at room temperature.
Raman spectra for pure silicon, samples A and B measured at room temperature presented in expanded scale. In the spectra, the redshift of Si mode for the sample B with respect to silicon reference sample and E2 (high) mode for samples A and B as well as the peak observed for the reference Si sample at 572 cm−1 of unknown origin are shown.
Room temperature photoluminescence spectra of GaN NWs for samples A and B.
PL spectra for sample A deconvoluted into two Gaussian peaks.
The intensity of PL spectra for both samples for various times of illumination by continuous laser (UV) light. A gradual decrease of PL intensity for longer illumination time is observed.
Article metrics loading...
Full text loading...