(a) XRD patterns of the polycrystalline sample La2O3Mn2Se2; (b) temperature dependence of the resistivity for La2O3Mn2Se2. The solid line indicates the curve fitted using the Arrhenius equation ρ = ρ 0 exp(Ea /k B T).
Temperature dependence of the susceptibility taken in ZFC and FC process with an applied field of 1 kOe. The inset is the enlarged part at high temperature.
(a) The ESR absorption lines at different temperatures; (b) the temperature dependence of the Laudé g-factor.
(a) The hysteresis loops of magnetization at 2 K after ZFC and FC under 5 T; (b) the hysteresis loops of magnetization at different temperatures in FC process under 5 T. The inset is the exchange bias field HEB at different temperatures.
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