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Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers
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Image of FIG. 1.
FIG. 1.

AFM images of the three samples in this study. Samples A, B, and C are shown in (a), (b), and (c), respectively. Image sizes are is 2.2 × 2.2 m for (a) and 1 × 1 m for (b) and (c).

Image of FIG. 2.
FIG. 2.

Reflectivity data vs time delay. Data from samples A, B, and C (as indicated) for two different pump intensities (values are relative to maximum intensity) are shown in (a). Data for A and B are vertically shifted for clarity. For comparison, reflectivity from GaAs(100) is shown in the inset of (a). Fits to reflectivity data are illustrated in (b) and (c) for samples B and C at a relative laser intensity of 0.7 and 0.34, respectively.

Image of FIG. 3.
FIG. 3.

Fast capture time vs laser intensity for samples A, B, and C. Symbols are results of fitting the reflectivity data. Solid lines are guides to the eye.

Image of FIG. 4.
FIG. 4.

Results of 1D diffusion model. (a) Carrier density vs distance from sample surface at 5 different time delays . The vertical line indicates location of QL. For this panel  = 0.1 and  = 0.77, which produces a fast decay similar to that of sample C at low excitation levels. (b) Near-surface (0–20 nm) carrier density vs time delay for  = 0.3 and  = 0.1, which gives decay similar to that of samples A and B at low excitation level. Points are results of model; solid line is bi-exponential fit with decay times of 0.28 and 1.6 ps. (c) Near-surface carrier density vs time delay for  = 0.77 and  = 0.1, as in (a). Solid-line fit has decay times of 0.14 and 1.1 ps.


Generic image for table
Table I.

Sample growth parameters. Long sample designations (030907-1, e.g.) are for cross referencing to PL measurements. Short designations (A, e.g.) are for internal reference in this paper. Also indicated are PL peak position and line width for ground-state QD emission.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers