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Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory
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Image of FIG. 1.
FIG. 1.

RHEED patterns of the initial stages of the GaN deposition on the ScO/YO buffer. Images were taken at substrate temperature along ScO [ 10] (GaN[11 0]) direction. Arrows in the RHEED pattern recorded after 120 s indicate reflections associated with cubic GaN inclusions.

Image of FIG. 2.
FIG. 2.

(a) RHEED image line spacing W/2 as a function of the GaN deposition time, (b) GaN crystal structure viewed along [11 0] direction, (c)ScO crystal structure viewed along [ 10].

Image of FIG. 3.
FIG. 3.

Sc 2p and N 1s XPS spectra taken after 0, 10, 30, 60, and 360 s of the GaN growth.

Image of FIG. 4.
FIG. 4.

(a) Attenuation curve of the Sc XPS line and (b) ScO surface coverage by the GaN islands as a function of the GaN deposition time. (c)AFM image of the GaN surface after 240 s of growth.

Image of FIG. 5.
FIG. 5.

Evolution of the Ga peak upon GaN growth.

Image of FIG. 6.
FIG. 6.

Integrated peak areas of the Ga N-Ga-O-Sc, Ga N-Ga-N, and N 1s signals plotted as a function of GaN growth time

Image of FIG. 7.
FIG. 7.

Sketch of the GaN/ScO interface model (a) cross section viewed along ScO [ ] direction and (b) top view. Here, nitride is stretched by 4.4% and the oxide is compressed by 4.4% to match Ga and O atoms. In the NI model, the oxygen vacancies in ScO are filled with nitrogen atoms.

Image of FIG. 8.
FIG. 8.

Interface models. Only bonds are shown. (a) Interface with nitrogen interstitials: NI model. The outer surface of the nitride is saturated with pseudo-hydrogen atoms (blue bonds) to simulate a thick film. (b) The same as in (a), but without the pseudo-hydrogen atoms; this is a “true” thin film. (c) Interface without nitrogen interstitials: OV model. The thin film version is shown (no termination of the outer surface by pseudo-hydrogen atoms). (d) Energy of the interfacial nitrogen for a thin film (blue dashed line) and for a thick film (red solid line), as a function of N chemical potential. The chemical potential varies from Ga-rich regime (on the left, equilibrium with Ga atom) to N-rich regime (on the right, equilibrium with N ) condition. The energy plotted is equal to the energy difference between the NI and OV structures, per N atom. ΔH: experimental, as quoted by Fuchs


Generic image for table
Table I.

Properties of wurtzite and zinc blende GaN.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory