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Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet
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10.1063/1.4809641
/content/aip/journal/jap/113/21/10.1063/1.4809641
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/21/10.1063/1.4809641
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of electron transport through a SMM weakly coupled to FM electrodes. The magnetizations of the two leads are collinear with the magnetic easy-axis of SMM (as z axis). The left (L) and right (R) electrodes are connected with the bias voltage V/2 and −V/2, respectively.

Image of FIG. 2.
FIG. 2.

TMR as a function of the bias and gate voltages in the case of FM coupling [(a),(d)], AFM coupling [(b),(e)], and FM coupling with a magnetic field along the easy-axis of SMM [(c),(f)] for different relaxation strength (left panel) and (right panel). The parameters are ,  = 1 meV, , and .

Image of FIG. 3.
FIG. 3.

The bias voltage dependence of current , differential conductance , and magnetization of SMM for the P [left panel (a)–(c)] and AP [right panel (e)–(g)] configurations with the gate voltage . TMR plots are shown in (d) and (h) for the FM and AFM exchange couplings, respectively.

Image of FIG. 4.
FIG. 4.

The bias voltage dependence of (a), (e), (b), (f), (c), (g), and TMR for the FM [(d)], AFM [(h)] exchange couplings with the gate voltage . The cotunneling currents and are shown in the insets of (a) and (e), respectively.

Image of FIG. 5.
FIG. 5.

TMR as a function of bias voltage for different gate voltages (a) , (b) 1 meV, and (c) −0.3 meV. (d) Plot of absolute currents for different relaxation strengths with a magnetic field along the easy-axis of SMM.

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/content/aip/journal/jap/113/21/10.1063/1.4809641
2013-06-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/21/10.1063/1.4809641
10.1063/1.4809641
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