Schematic diagram of electron transport through a SMM weakly coupled to FM electrodes. The magnetizations of the two leads are collinear with the magnetic easy-axis of SMM (as z axis). The left (L) and right (R) electrodes are connected with the bias voltage V/2 and −V/2, respectively.
TMR as a function of the bias and gate voltages in the case of FM coupling [(a),(d)], AFM coupling [(b),(e)], and FM coupling with a magnetic field along the easy-axis of SMM [(c),(f)] for different relaxation strength (left panel) and (right panel). The parameters are , U = 1 meV, , and .
The bias voltage dependence of current I, differential conductance G, and magnetization of SMM for the P [left panel (a)–(c)] and AP [right panel (e)–(g)] configurations with the gate voltage . TMR plots are shown in (d) and (h) for the FM and AFM exchange couplings, respectively.
The bias voltage dependence of IP (a), IAP (e), GP (b), GAP (f), (c), (g), and TMR for the FM [(d)], AFM [(h)] exchange couplings with the gate voltage . The cotunneling currents IP and IAP are shown in the insets of (a) and (e), respectively.
TMR as a function of bias voltage for different gate voltages (a) , (b) 1 meV, and (c) −0.3 meV. (d) Plot of absolute currents for different relaxation strengths with a magnetic field along the easy-axis of SMM.
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