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Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field
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10.1063/1.4809763
/content/aip/journal/jap/113/21/10.1063/1.4809763
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/21/10.1063/1.4809763
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the GaAs/InGaAs quantum well, with a plane of GaSb QDs embedded in the InGaAs layers. The left shows the band diagram of the system and the deformed wave function for the electron. On the right, the QDs plane is a distance from the interface and the geometry shape of the QD is assumed to be cylinder with an average radius a = 5 nm and an average height h = 2 nm. An in-plane magnetic field is applied along the y axis.

Image of FIG. 2.
FIG. 2.

Scattering time is plotted as a function of the angle of the initial wave vector with respect to the x axis, with the magnetic field B = 5 T, and the 2DEG sheet density  = 1 × 10 cm.

Image of FIG. 3.
FIG. 3.

Mobility is plotted as a function of the angle of the applied electric field with respect to the x-axis, with the magnetic field B = 5 T, and the 2DEG sheet density  = 1 × 10 cm.

Image of FIG. 4.
FIG. 4.

Anisotropic mobilities (the angle of applied electric field ) and (the angle of applied electric field ) are plotted as a function of the magnetic field strength B, with the 2DEG sheet density  = 1 × 10 cm.

Image of FIG. 5.
FIG. 5.

Mobility is plotted as a function of the 2DEG sheet density , with the magnetic field strength B = 5 T and the angle of applied electric field .

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/content/aip/journal/jap/113/21/10.1063/1.4809763
2013-06-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/21/10.1063/1.4809763
10.1063/1.4809763
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