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Electronic transport in (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 epitaxial structures
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) θ–2θ scan and (b) φ scan of a 100 nm thick PZT layer on LSMO-STO; (c) θ–2θ scan and (d) φ scan of a 90 nm thick BTO layer on LSMO-STO.

Image of FIG. 2.
FIG. 2.

(a) TEM bright field image of a LSMO-PZT-LSMO heterostructure and (b) high resolution TEM (HRTEM) image of the PZT-LSMO-STO interfaces.

Image of FIG. 3.
FIG. 3.

(a) dielectric hysteresis loop and (b) current hysteresis loop recorded at 1 kHz on LSMO-BaTiO-LSMO heterostructure with 30 nm thick BaTiO.

Image of FIG. 4.
FIG. 4.

I–V characteristics of two LSMO-BaTiO-LSMO structures, with 30 nm and 90 nm thick BaTiO, recorded at (a) 200 K, (b) 300 K, and (c) 400 K.

Image of FIG. 5.
FIG. 5.

The logJ ∼ logV representation at different temperatures for the LSMO-BaTiO-LSMO structures with 30 nm thick BaTiO. The higher currents are for the negative bias. The lines are guide for the eye showing the convergence to the temperature independent SCLC trap free regime.

Image of FIG. 6.
FIG. 6.

Arrhenius plots for several voltages on both positive and negative sides of the I–V characteristics. The lines are the linear fits.

Image of FIG. 7.
FIG. 7.

The voltage dependence of the activation energy for negative and positive polarities of the I–V characteristics for a LSMO-BTO (30 nm)/LSMO heterostructure. The lines are the linear fits.

Image of FIG. 8.
FIG. 8.

The representation of the measured current as function of sinh(α) for a constant temperature of 300 K.

Image of FIG. 9.
FIG. 9.

Experimental and simulated I–V characteristics at three temperatures: (a) 200 K; (b)300 K; (c) 400 K.

Image of FIG. 10.
FIG. 10.

Experimental (symbols) and the simulated (lines) I–V characteristics, respectively, for heterostructures with 30 nm and 90 nm BTO layer thicknesses.

Image of FIG. 11.
FIG. 11.

Ferroelectric hysteresis loop (a) and the corresponding current hysteresis loop (b) recorded at different temperatures for a LSMO-PZT-LSMO heterostructure with 100 nm thick PZT.

Image of FIG. 12.
FIG. 12.

I–V characteristics measured at (a) 200 K and (b) 300 K on LSMO-PZT-LSMO structures with 25 nm, 50 nm, and 100 nm thick PZT layer.

Image of FIG. 13.
FIG. 13.

The loglog representations for (a) negative and (b) positive fields, respectively, and at different temperatures for the 100 nm thick PZT layer.

Image of FIG. 14.
FIG. 14.

Arrhenius plot for a positive bias of 2 V. The line represents the linear fit.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport in (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 epitaxial structures