(a) θ–2θ scan and (b) φ scan of a 100 nm thick PZT layer on LSMO-STO; (c) θ–2θ scan and (d) φ scan of a 90 nm thick BTO layer on LSMO-STO.
(a) TEM bright field image of a LSMO-PZT-LSMO heterostructure and (b) high resolution TEM (HRTEM) image of the PZT-LSMO-STO interfaces.
(a) dielectric hysteresis loop and (b) current hysteresis loop recorded at 1 kHz on LSMO-BaTiO3-LSMO heterostructure with 30 nm thick BaTiO3.
I–V characteristics of two LSMO-BaTiO3-LSMO structures, with 30 nm and 90 nm thick BaTiO3, recorded at (a) 200 K, (b) 300 K, and (c) 400 K.
The logJ ∼ logV representation at different temperatures for the LSMO-BaTiO3-LSMO structures with 30 nm thick BaTiO3. The higher currents are for the negative bias. The lines are guide for the eye showing the convergence to the temperature independent SCLC trap free regime.
Arrhenius plots for several voltages on both positive and negative sides of the I–V characteristics. The lines are the linear fits.
The voltage dependence of the activation energy for negative and positive polarities of the I–V characteristics for a LSMO-BTO (30 nm)/LSMO heterostructure. The lines are the linear fits.
The representation of the measured current as function of sinh(αV) for a constant temperature of 300 K.
Experimental and simulated I–V characteristics at three temperatures: (a) 200 K; (b)300 K; (c) 400 K.
Experimental (symbols) and the simulated (lines) I–V characteristics, respectively, for heterostructures with 30 nm and 90 nm BTO layer thicknesses.
Ferroelectric hysteresis loop (a) and the corresponding current hysteresis loop (b) recorded at different temperatures for a LSMO-PZT-LSMO heterostructure with 100 nm thick PZT.
I–V characteristics measured at (a) 200 K and (b) 300 K on LSMO-PZT-LSMO structures with 25 nm, 50 nm, and 100 nm thick PZT layer.
The logJ ∼ logV representations for (a) negative and (b) positive fields, respectively, and at different temperatures for the 100 nm thick PZT layer.
Arrhenius plot for a positive bias of 2 V. The line represents the linear fit.
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