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Virtual GaN substrates via buffers on Si(111): Transmission electron microscopy characterization of growth defects
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10.1063/1.4809561
/content/aip/journal/jap/113/22/10.1063/1.4809561
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4809561

Figures

Image of FIG. 1.
FIG. 1.

HRTEM micrograph of the structure. Within the interfaces, a network of misfit dislocations is found. The crystallographic directions used in the text are indicated, the directions for are identical to those of .

Image of FIG. 2.
FIG. 2.

Sketches of the interfacial planes of and with the metal atoms only. Additionally, the proposed Burgers vectors and their components are shown.

Image of FIG. 3.
FIG. 3.

Weak-beam dark fields of the GaN film of two perpendicular reflections (A: , B: ), showing the threading dislocations. The cloudy features stem from contamination during the microscopy. The arrows exemplarily indicate TDs bending towards pinhole surfaces.

Image of FIG. 4.
FIG. 4.

Strong beam dark fields of the opposite reflections (A) and (B). The contrast between the regions in between the columnar grains and the grains is inverted, when the opposite reflection is chosen, as exemplarily indicated by the arrows.

Image of FIG. 5.
FIG. 5.

Beam-plots of (solid) and (dashed) under strong beam conditions in a systematical row.

Image of FIG. 6.
FIG. 6.

HRTEM through focal series of an inversion domain boundary. The atomic structure of the boundary is indicated in the lower right; Ga atoms are full circles, N atoms are open circles.

Image of FIG. 7.
FIG. 7.

Left: central part of CBED pattern taken within the area of a GaN grain. Right: Calculation for 98 nm thickness.

Image of FIG. 8.
FIG. 8.

HRTEM of a cubic inclusion close to the boundary.

Tables

Generic image for table
Table I.

Strain and rotational components averaged over several HRTEM micrographs ( is the in-plane direction, is the out-of-plane direction). The strain of the -film was only evaluated in micrographs which also show the Si substrate.

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/content/aip/journal/jap/113/22/10.1063/1.4809561
2013-06-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): Transmission electron microscopy characterization of growth defects
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4809561
10.1063/1.4809561
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