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Structure and magnetoresistance of current-perpendicular-to-plane pseudo spin valves using Co2Mn(Ga0.25Ge0.75) Heusler alloy
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10.1063/1.4809643
/content/aip/journal/jap/113/22/10.1063/1.4809643
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4809643

Figures

Image of FIG. 1.
FIG. 1.

The anomalous corrections to the scattering factors of Co, Mn, Ge, and Ga, (a) and (b) . and were corrected by the convolution of the incident energy width of 4.5 eV. (c) Calculated results on the energy dependence of the (111) intensity with various DO disorder. The intensity was normalized by that at 7.5 keV.

Image of FIG. 2.
FIG. 2.

XRD patterns in the θ-2θ scan profiles from (a) {001} and (b) {111} plane of CMGG films with various annealing temperatures. (c) Integrated intensity ratio of / for B2 ordered structure (black square) and / for L2 ordered structure (blue square) calculated from the XRD profiles shown in (a) and (b).

Image of FIG. 3.
FIG. 3.

(a) Annealing temperature dependence on ΔRA of CoMn(GaGe) (square) and several established Heusler alloys (CoFe(GaGe) (circle) and polycrystalline CoMnGe (triangle)). MR curves obtained from CPP-PSVs annealed at (b) 250 °C and (c) 400 °C.

Image of FIG. 4.
FIG. 4.

(a) cross sectional bright-field TEM and (b) cross sectional high resolution TEM images of CoMnGaGe(5)/Ag(5)/CoMnGaGe(5) pseudo spin valve annealed at 400 °C.

Image of FIG. 5.
FIG. 5.

(a) cross sectional bright-field TEM and (b) cross sectional high resolution TEM images of CoMnGaGe(5)/Ag(5)/CoMnGaGe(5) pseudo spin valve annealed at 500 °C.

Image of FIG. 6.
FIG. 6.

(a) HAADF image and EDS mappings of (b) Ag, (c) Co, (d) Mn, (e) Ga and (f) Ge in CoMnGaGe(10)/Ag(5)/CoMnGaGe(10) pseudo spin valve annealed at 500 °C.

Image of FIG. 7.
FIG. 7.

3DAP analyses results of (a) a region including an interface between top CMGG and Ag spacer and (b) that between bottom CMGG and Ag spacer in CoMnGaGe(5)/Ag(5)/CoMnGaGe(5) pseudo spin valve annealed at 500 °C. The green, red, orange, violet, and blue dots correspond to the positions of Co, Mn, Ga, Ge, and Ag atoms.

Image of FIG. 8.
FIG. 8.

Energy dependence of the (111) peak intensity in the film of Cr(10)/Ag(100)/CoMnGaGe(20)/Ag(5)/Ru(8) annealed by various annealing temperatures. The dashed line represents the calculated curve under the assumption of 18% DO disorder with the subtraction of an empirical offset line.

Image of FIG. 9.
FIG. 9.

Change of ΔRA as a function of the CMGG thickness of CoMnGaGe/Ag(5)/CoMnGaGe pseudo spin-valves annealed at 250 °C (circle) and 400 °C (square). The solid lines represent the fitting results by the Valet-Fert model.

Image of FIG. 10.
FIG. 10.

Temperature dependence on ΔRA for CoMnGaGe(5)/Ag(5)/CoMnGaGe(5) pseudo spin valve annealed at 250 °C (square) and 400 °C (circle).

Tables

Generic image for table
Table I.

Bulk and interface spin asymmetries (β and γ) and spin diffusion length ( ) of CMGG-based CPP-PSVs annealed at the temperature .

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/content/aip/journal/jap/113/22/10.1063/1.4809643
2013-06-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure and magnetoresistance of current-perpendicular-to-plane pseudo spin valves using Co2Mn(Ga0.25Ge0.75) Heusler alloy
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4809643
10.1063/1.4809643
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