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Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
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10.1063/1.4809928
/content/aip/journal/jap/113/22/10.1063/1.4809928
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4809928
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Figures

Image of FIG. 1.
FIG. 1.

Optical microscope images at 200 times magnification of 115 m thick 4H-SiC epitaxial layers with C/Si = 0.9, Cl/Si = 5, Si/H = 0.25%, and growth rate = 112 m/h for various GT.

Image of FIG. 2.
FIG. 2.

Optical microscope images at 200 times magnification of 4H-SiC epitaxial layers grown at temperature = 1575 °C, Cl/Si = 5, growth time = 1 h, Si/H = 0.25%, and various C/Si ratios.

Image of FIG. 3.
FIG. 3.

Dependencies of (a) RMS value; (b) growth rate; (c) triangular defects density on the C/Si ratio for 4H-SiC epitaxial layers with growth temperature = 1575 °C, Cl/Si = 5, and Si/H = 0.25%.

Image of FIG. 4.
FIG. 4.

AFM images of a 4 × 4 m area of epitaxial layers with growth temperature = 1575 °C, Cl/Si = 5, growth time = 63 min and Si/H = 0.25%, and various C/Si ratios.

Image of FIG. 5.
FIG. 5.

Optical microscope images at 200 times magnification of 4H-SiC epitaxial layers with growth temperature = 1575 °C, C/Si = 0.8, Cl/Si = 5, growth rate = 105 m/h, and Si/H = 0.25% for various etching time at growth temperature.

Image of FIG. 6.
FIG. 6.

Dependence of the growth rate on the Cl/Si ratio for 4H-SiC epitaxial layers with growth temperature = 1575 °C, C/Si = 0.8, etching time at growth temperature = 18 min, and Si/H = 0.25%.

Image of FIG. 7.
FIG. 7.

Dependence of the growth rate on the Si/H ratio for the 4H-SiC epitaxial layers grown at 1575 °C, with C/Si = 0.8, etching time at growth temperature = 18 min, and Cl/Si = 6.

Image of FIG. 8.
FIG. 8.

Optical microscope images at 50 times magnification of triangular defects having different structure depending on the C/Si ratio.

Image of FIG. 9.
FIG. 9.

(Raman) (a) Raman spectrum of 4H-SiC in backscattering geometry from the (0001) surface, representative for all samples on a defect-free surface, and (b) typical spectrum when the laser spot is within a triangular defect of the type shown in Fig. 8(b) . The latter spectrum shows contribution from both 4H and 3C polytypes and is similar to the spectra obtained also from the other type of triangular defects shown in Fig. 8(a) . The spectra are recorded at room temperature using an excitation a 532 nm laser line. The peaks are labeled with their respective Raman shift in cm.

Image of FIG. 10.
FIG. 10.

(PL) LTPL spectra of (a) sample with one of the lowest background doping levels, [N] = 1.3 10 cm, and (b) sample with high background doping, [N] = 1 × 10 cm. P and Q denote the no-phonon lines of the N-bound exciton. Some of the prominent phonon replicas of the N-bound P line (respectively, the free exciton) are denoted with the letter P (respectively, I) and a subscript showing the approximate energy of the involved phonon, in a common notation. Note that spectrum (a) is entirely dominated by the emission from the free-exciton recombination, yet the Q line is observable and used to determine the nitrogen background doping. The insert shows the PL emission in the whole spectral region measured, illustrating the contribution from the DI center, as well as no detectable contribution from other defects or polytypes.

Image of FIG. 11.
FIG. 11.

Background doping concentration of 4H-SiC epitaxial layers with growth temperature = 1575 °C: (a) at various C/Si ratios, (b) at various Si/H% and C/Si = 0.8.

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/content/aip/journal/jap/113/22/10.1063/1.4809928
2013-06-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4809928
10.1063/1.4809928
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