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Femtosecond laser diagnostics of the built-in electric field across the p+-Si/SiO2 interface and its ultrafast shielding
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10.1063/1.4810902
/content/aip/journal/jap/113/22/10.1063/1.4810902
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4810902
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Figures

Image of FIG. 1.
FIG. 1.

Typical temporal evolution of normalized EFISH signals during the first 60 s originating from intrinsic i-Si/SiO and boron doped p-Si/SiO interfaces under fs laser oscillator irradiation (cf. Ref. ); inset: traces recorded over 500 s visualizing the EFISH signal normalization.

Image of FIG. 2.
FIG. 2.

Temporal evolution of EFISH signals for the first 100 s originating from the p-Si/SiO sample for six incident intensities : 35, 45, 60, 85, 100, and 115 GW/cm at 782.8 nm central wavelength; the solid lines are fitting curves according to Eq. (4) ; also cf. Refs. . The arrows highlight values as used in Fig. 3 .

Image of FIG. 3.
FIG. 3.

EFISH signal as a function of incident peak intensity for six fs laser wavelengths 741.2 nm ≤ λ ≤ 801.0 nm; lines: slope n of log-log diagrams related to power law .

Image of FIG. 4.
FIG. 4.

Exponent n (full circles, down-triangle from Ref. , and up-triangle from Ref. ) of power law as a function of the exciting fs laser wavelength (lower abscissa scale) with a Lorentzian fit to the data; the related two-photon energy 2hν (upper abscissa scale) together with the shielding parameter γ = 2 – n(λ) values (filled squares); empty squares are the 2hν dependent SHG yields adapted from Fig. 1 of Ref. .

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/content/aip/journal/jap/113/22/10.1063/1.4810902
2013-06-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Femtosecond laser diagnostics of the built-in electric field across the p+-Si/SiO2 interface and its ultrafast shielding
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4810902
10.1063/1.4810902
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