(a) Current through the sample during the thermal annealing at 550 °C for 5 h while an electric field of 100 V/cm was applied, the inset shows the schematic diagram of the sample with an area of 1 cm × 2 cm with Pt electrodes at the edges in order to apply an electric field during thermal annealing, and (b) the MILC growth rate of a-Si films as a function of the applied electric field in the anode and the cathode direction.
(a) Optical microscopy image of MIC, MILC, and a-Si region of the sample after annealing at 550 °C for 5 h while an electric field of 100 V/cm was applied, and FE-SEM images of MILC and a-Si region of the sample with the applied electric field at the leading edge facing (b) the anode and (c) the cathode with the corresponding images of the MILC region as the insets. (d) FE-SEM image of MILC and a-Si region of the sample at the leading edge without the electric field with the corresponding image of the MILC region as the inset.
Schematic diagrams of (a) the coherent interface boundary between Si and NiSi2, and (b) the migrating phase boundary by Ni ion and Ni vacancy hopping in (110) plane of the crystalline-Si/NiSi2 interface under an electric field.
Characteristic microstructure of MILC growth region.
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