1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of electric field on amorphous silicon thin films during Ni induced lateral crystallization
Rent:
Rent this article for
USD
10.1063/1.4811350
/content/aip/journal/jap/113/22/10.1063/1.4811350
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4811350

Figures

Image of FIG. 1.
FIG. 1.

(a) Current through the sample during the thermal annealing at 550 °C for 5 h while an electric field of 100 V/cm was applied, the inset shows the schematic diagram of the sample with an area of 1 cm × 2 cm with Pt electrodes at the edges in order to apply an electric field during thermal annealing, and (b) the MILC growth rate of a-Si films as a function of the applied electric field in the anode and the cathode direction.

Image of FIG. 2.
FIG. 2.

(a) Optical microscopy image of MIC, MILC, and a-Si region of the sample after annealing at 550 °C for 5 h while an electric field of 100 V/cm was applied, and FE-SEM images of MILC and a-Si region of the sample with the applied electric field at the leading edge facing (b) the anode and (c) the cathode with the corresponding images of the MILC region as the insets. (d) FE-SEM image of MILC and a-Si region of the sample at the leading edge without the electric field with the corresponding image of the MILC region as the inset.

Image of FIG. 3.
FIG. 3.

Schematic diagrams of (a) the coherent interface boundary between Si and NiSi, and (b) the migrating phase boundary by Ni ion and Ni vacancy hopping in (110) plane of the crystalline-Si/NiSi interface under an electric field.

Tables

Generic image for table
Table I.

Characteristic microstructure of MILC growth region.

Loading

Article metrics loading...

/content/aip/journal/jap/113/22/10.1063/1.4811350
2013-06-14
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of electric field on amorphous silicon thin films during Ni induced lateral crystallization
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/22/10.1063/1.4811350
10.1063/1.4811350
SEARCH_EXPAND_ITEM