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Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3
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10.1063/1.4807651
/content/aip/journal/jap/113/23/10.1063/1.4807651
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4807651
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The new alloy system based on transition metal oxides and typical metal oxides with corundum structure (a) and a schematic image of perfect coherent growth system in a heterojunction (b).

Image of FIG. 2.
FIG. 2.

Diffraction spots of plan-view observation image of α-(GaFe)O thin film (a) and α-(GaFe)O/α-AlO interface viewed along (b).

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of α-(GaFe)O/α-AlO interface viewed along . (b) is the enlarged image of (a).

Image of FIG. 4.
FIG. 4.

Results of TEM-EDX measurement of plan-view observation image of α-(GaFe)O thin film (a) and α-(GaFe)O/α-AlO interface (b) and the composition distributions of oxygen, Fe, Ga, and Al elements drew by different colors.

Image of FIG. 5.
FIG. 5.

curves of α-(Ga Fe)O alloy thin films depend on Fe concentrations at 110 K with the magnetic field was applied parallel to the axis.

Image of FIG. 6.
FIG. 6.

Magnetic properties of the α-(GaFe)O thin film of  = 0.58. The figure shows the curve measured at  = 110 K and 300 K with the right side of the curve measured at  = 1000 Oe with the magnetic field was applied perpendicular to the axis, respectively.

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/content/aip/journal/jap/113/23/10.1063/1.4807651
2013-06-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4807651
10.1063/1.4807651
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