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Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy
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10.1063/1.4810900
/content/aip/journal/jap/113/23/10.1063/1.4810900
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4810900
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Figures

Image of FIG. 1.
FIG. 1.

Measured effective lifetime as a function of substrate temperature, as-deposited and after annealing. The inset shows the sample structure used throughout this work. The lines are guides to the eye.

Image of FIG. 2.
FIG. 2.

(a) Measured effective lifetime after annealing as a function of dilution ratio while fixing the temperature at 250 °C and (b) film crystallinity and optical bandgap as a function of dilution ratio. Multiple points at certain dilution ratio represent repeated experiments to check reproducibility. The lines are guides to the eye.

Image of FIG. 3.
FIG. 3.

(a) Measured effective lifetime as a function of pressure while keeping temperature at 250 °C and dilution ratio at 1; (b) film crystallinity and Urbach energy as a function of pressure; (c) optical emission intensity of Balmer Hα, SiH* line, and their ratio as a function of pressure; the horizontal dotted line represents suggested threshold value for amorphous to micro-crystalline transition. The three regions separated by vertical dotted lines are defined for the sake of clear presentation only. The lines are guides to the eye.

Image of FIG. 4.
FIG. 4.

(a) DC bias during plasma deposition as a function of pressure; (b) deposition rate as a function of pressure. The three regions defined are identical to those in Fig. 3 . The lines are guides to the eye.

Image of FIG. 5.
FIG. 5.

(a) Measured effective lifetime as a function of pressure while changing dilution ratio to 0.3; (b) corresponding film crystallinity and Urbach energy as a function of pressure; (c) H/SiH* ratio as a function of pressure while keeping the dilution ratio at 0.3. The lines are guides to the eye.

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/content/aip/journal/jap/113/23/10.1063/1.4810900
2013-06-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4810900
10.1063/1.4810900
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