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Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition
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10.1063/1.4811187
/content/aip/journal/jap/113/23/10.1063/1.4811187
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4811187

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image (left) and RHEED image (right) of SrTiO (001) substrate. (b) and (c) AFM, real-time RHEED oscillations and RHEED images of samples grown at 720 °C and 776 °C under 1 J/cm laser fluence. (d) AFM (upper left) and SEM (upper right) images of sample grown at 840 °C under 1 J/cm laser fluence. Mn (lower left) and O (lower right) EDX spectroscopy are shown corresponding to SEM image area.

Image of FIG. 2.
FIG. 2.

Samples grown at different temperatures with laser fluence of 4 J/cm. (a) and (b) surface morphologies of samples grown at 660 °C and 760 °C. (c) and (d) corresponding RHEED oscillations and image of sample in (b).

Image of FIG. 3.
FIG. 3.

(a) Growth pressure dependence of surface morphology under growth temperature of 730 °C and laser fluence of 1 J/cm. (b) Surface roughness (in unit of nm) map of the sample under oxygen pressure gradient. The dashed arrow indicates the direction of increasing local pressure.

Image of FIG. 4.
FIG. 4.

Laser fluence dependence of samples grown at (a) 1 J/cm and (b) 2.2 J/cm, both under growth temperature of 740 °C. (c) and (d) corresponding RHEED oscillations and image of the sample in (b).

Image of FIG. 5.
FIG. 5.

Microscopic illustration of the growth processes. (a) Schematic diagram of the atomic process in the deposition. (b) Schematic of the poor crystalization (left) and the good crystalization (right). (c) Schematic of the 2D layer-by-layer growth and the 3D growth.

Image of FIG. 6.
FIG. 6.

The theoretically constructed growth diagram. L (red): boundary between stoichiometric and non-stoichiometric growth; L (green): boundary between 2D layer-by-layer (LBL) and 3D growth; L (blue): boundary between the P-C and W-C growth.

Image of FIG. 7.
FIG. 7.

Qualitative comparison between experimental results and theoretical growth diagram. Arrows description: dashed-dotted-dotted: temperature increase (720 °C, 776 °C, 840 °C) under constant laser fluence (1 J/cm) and pressure; dashed-dotted: temperature increase (660 °C, 760 °C) under constant laser fluence (4 J/cm) and pressure; long dashed: laser fluence increase (1 J/cm, 2.2 J/cm) under constant temperature and pressure; solid: pressure increase under constant temperature (730 °C) and laser fluence (1 J/cm).

Tables

Generic image for table
Table I.

EDX analysis of non-stoichiometric sample (840 °C, 1 J/cm).

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/content/aip/journal/jap/113/23/10.1063/1.4811187
2013-06-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth diagram of La0.7Sr0.3MnO3 thin films using pulsed laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4811187
10.1063/1.4811187
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