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The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes
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10.1063/1.4811224
/content/aip/journal/jap/113/23/10.1063/1.4811224
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4811224
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the fabrication processes of type I and type II LEDs, respectively.

Image of FIG. 2.
FIG. 2.

SEM images of (a) Ni nanodots on the LED surface after RTA, (b) the cross-section of nanorod LEDs array, (c) the top view, and (d) the tilted view of the nanorods interconnected by MLG films.

Image of FIG. 3.
FIG. 3.

(a) curves before and after a thermal annealing (200 °C, 15 min). (b) I-V curves of three different types of LEDs. (c) EL spectra at various injection current. The inset of (c) shows the EL intensity of type I and type II LEDs, respectively.

Image of FIG. 4.
FIG. 4.

SEM images of MLG films around the metal pad after the devices fabrication of (a) type II and (b) type I LEDs, respectively. (c) Raman spectra of the two types of LEDs after fabrication processes.

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/content/aip/journal/jap/113/23/10.1063/1.4811224
2013-06-17
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent electrodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4811224
10.1063/1.4811224
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