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Effect of thickness on the photoluminescence of silicon quantum dots embedded in silicon nitride films
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10.1063/1.4811361
/content/aip/journal/jap/113/23/10.1063/1.4811361
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4811361

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the RPECVD system used to fabricate the samples.

Image of FIG. 2.
FIG. 2.

FTIR transmission spectrum of samples T3, T4, and T5.

Image of FIG. 3.
FIG. 3.

HRTEM micrograph for (a) sample T1 and (b) sample T5. Both samples have the same Si-nanocluster average size of 3.1 nm.

Image of FIG. 4.
FIG. 4.

Average size, density, and size distribution of particles for samples T1 and T5. More than 81% of the particles found have sizes between 2 and 4 nm.

Image of FIG. 5.
FIG. 5.

PL spectra of samples T1, T2, and T3. The PL spectra of sample T3 is shifted towards ∼523 nm and has a shoulder at ∼403 nm.

Image of FIG. 6.
FIG. 6.

PL spectra of samples T4 and T5, along with that of the PL spectrum of sample T1 multiplied by a factor of 90. The peaks appearing at wavelengths above 700 nm in the augmented PL spectra are due to spurious light during measurements.

Image of FIG. 7.
FIG. 7.

PL spectra from films with different thickness, showing clearly the distortions generated in the PL spectra with respect to that of the thinnest sample, as the thickness increases above 200 nm.

Image of FIG. 8.
FIG. 8.

Optical transmittance spectra for samples T1, T3, T4, T5 with different thickness deposited on quartz substrates.

Image of FIG. 9.
FIG. 9.

Schematic of the composite film being excited at an oblique angle of incidence and emitting luminescent light back into the incidence medium. The multiple reflection process of a plane wave radiated upwards by a QD is also shown.

Image of FIG. 10.
FIG. 10.

Normalized simulated and experimental PL spectra for sample T3. The thickness used to simulate this PL spectrum was 240 nm.

Image of FIG. 11.
FIG. 11.

Normalized simulated and experimental PL spectra for sample T4. The thickness used in the simulated PL spectrum was 1775 nm.

Image of FIG. 12.
FIG. 12.

Normalized simulated and experimental spectra for sample T5. In this case, the thickness used for the simulation of the PL spectrum was 4340 nm.

Tables

Generic image for table
Table I.

Main characteristics of the samples.

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/content/aip/journal/jap/113/23/10.1063/1.4811361
2013-06-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thickness on the photoluminescence of silicon quantum dots embedded in silicon nitride films
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/23/10.1063/1.4811361
10.1063/1.4811361
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