θ-2θ patters of the NiO/c-YSZ/Si heterostructures: (a) pristine sample, (b) laser annealed sample, and (c) high resolution θ-2θ scan of the pristine and laser treated samples.
φ-Patterns acquired from NiO(200) reflection (2θ = 43.31°, ψ = 54.24°), c-YSZ(202) reflection (2θ = 50.37°, ψ = 45.00°), and Si(202) reflection (2θ = 47.57°, ψ = 45.00°).
High resolution TEM micrographs showing a crystallographically continuous domain boundary in the NiO epilayer.
Schematic illustration of the epitaxial relationship across the NiO/c-YSZ interface. NiO and c-YSZ lattices are represented in red and blue, respectively.
High resolution TEM image of the interface between the NiO epilayer and the c-YSZ buffer.
(a) Cross section bright field image and the SAED pattern taken from the laser annealed sample and (b) interface between the pristine and the laser treated regions. The SAED pattern belongs to Si, c-YSZ, and NiO zones.
O(1s) core level binding energy in: (a) as-deposited and (b) laser annealed samples.
Ni(2p3/2) core level binding energy in: (a) as-deposited and (b) laser annealed samples.
The effect of nanosecond laser annealing on the photocatalytic activity of NiO(111)/c-YSZ(001)/Si(001) heterostructures.
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