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Theoretical analysis of multilevel intermediate-band solar cells using a drift diffusion model
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10.1063/1.4811681
/content/aip/journal/jap/113/24/10.1063/1.4811681
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4811681

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the carrier transitions, energy levels/gaps, and the position x, which is the distance from the edge of the p-emitter layer. The solid arrows are the carrier generation rates, , and which represent the generation between the conduction band (CB) and the valence band (VB), between CB and IB (th intermediate band) and between VB and IB, respectively. Similarly, dotted arrows are the carrier recombination rates, , and .

Image of FIG. 2.
FIG. 2.

Energy band diagram and Fermi energy levels for (a) a 6-level IBSC and (b) a 3-level IBSC with / of 0.5 in short circuit condition under 1 sun. Note that the Fermi energy levels of IB are not depicted in (a) to avoid confusion.

Image of FIG. 3.
FIG. 3.

Electron occupation of each IB, and the average value, for a 6-level IBSC under (a) 1 sun and (c) 1000 suns, and for a 3-level IBSC under (b) 1 sun and (d) 1000 suns in the case of / of 0.5.

Image of FIG. 4.
FIG. 4.

The average occupation of electrons in each IB for a 6-level IBSC under (a) 1 sun and (c) 1000 suns, and the occupation for a 3-level IBSC under (b) 1 sun and (d) 1000 suns for three values of / under short circuit conditions.

Image of FIG. 5.
FIG. 5.

Optical transition rates via IB1 for both a 6-level IBSC and a 3-level IBSC under 1 sun for various values of /.

Image of FIG. 6.
FIG. 6.

Optical transition rates via IB1 for both a 6-level IBSC and a 3-level IBSC under 1000 suns for various values of /.

Image of FIG. 7.
FIG. 7.

characteristics for a 6-level IBSC and 3-level IBSC under 1 sun and 1000 suns. For comparison, the no-IB solar cell curve represents the characteristic of a single junction solar cell. The current density under 1000 suns is normalized by the sun concentration.

Image of FIG. 8.
FIG. 8.

Conversion efficiencies of 6 - and 3-level IBSC depending on / under (a) 1 sun and (b) 1000 suns. The dashed lines are the thermodynamic limit efficiencies obtained from a detailed balance limit calculation, and the dotted lines are the efficiencies of the single junction solar cell calculated from the device simulation.

Tables

Generic image for table
Table I.

Simulation parameters used in this paper.

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/content/aip/journal/jap/113/24/10.1063/1.4811681
2013-06-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theoretical analysis of multilevel intermediate-band solar cells using a drift diffusion model
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4811681
10.1063/1.4811681
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