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In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N
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10.1063/1.4812243
/content/aip/journal/jap/113/24/10.1063/1.4812243
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812243
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of the N 1 ((a)–(c)) core levels from the native oxide (a), NHOH etched (b), and atomic hydrogen treated (c) surface, from the initial surfaces, after annealing at 300 °C in UHV/atomic hydrogen cleaning, and each individual ALD half cycle deposition. (d) and (e) show XPS spectra of C 1 and O 1 core levels from the initial surfaces, after annealing at 300 °C in UHV/atomic hydrogen cleaning and 20 full cycles of HfO deposition. Figure 1(f) shows the ratio of C 1 and O 1 to the Ga3d.

Image of FIG. 2.
FIG. 2.

XPS spectra of Ga 2 ((a)–(c)) core levels from the native oxide (a), NHOH etched (b), and atomic hydrogen treated (c) surfaces, from the initial surfaces, after annealing at 300 °C in UHV/atomic hydrogen cleaning, and each individual ALD half cycle deposition. Figure 2(d) shows the ratio of gallium oxide to the bulk Ga-AlN form the Ga 2 spectra.

Image of FIG. 3.
FIG. 3.

XPS spectra of Al 2 ((a)–(c)) core levels from the native oxide (a), NHOH etched (b), and AH (c) surfaces, from the initial surfaces, after annealing at 300 °C in UHV/atomic hydrogen cleaning, after first pulse of TDMA-Hf and after 10 full cycles. Figure 3(d) shows the ratio of Al-O to the bulk Al-GaN form the Al 2 spectra.

Image of FIG. 4.
FIG. 4.

XPS spectra of Ga 3 and Hf 4 ((a)–(c)) core levers from the native oxide (a), NHOH etched (b), and AH (c) surfaces from the complete process. Figure 4(d) shows the ratio of Hf 4 to the b Ga 3. Figure 4(e) shows Hf 4 from native oxide, NHOH etched, and AH surfaces after annealing at 300 °C in UHV/atomic hydrogen cleaning, after first pulse of TDMA-Hf, after second pulse of TDMA-Hf, and after 10 full cycles.

Image of FIG. 5.
FIG. 5.

XPS spectra of C 1 from the native oxide and AH surfaces from the initial surface, after 10 cycles HfO, and after 120 cycles HfO (∼10 nm).

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/content/aip/journal/jap/113/24/10.1063/1.4812243
2013-06-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812243
10.1063/1.4812243
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