1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range
Rent:
Rent this article for
USD
10.1063/1.4812277
/content/aip/journal/jap/113/24/10.1063/1.4812277
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812277

Figures

Image of FIG. 1.
FIG. 1.

Top: Raw absorption coefficient data collected in transmission mode for powder c-GaAs at the As edge at  = 20 K. Bottom: Raw absorption coefficient data collected in fluorescence mode for a thin film of a-GaNAs on a glass substrate at the As edge at  = 20 K.

Image of FIG. 2.
FIG. 2.

EXAFS function data (points) extracted from absorption coefficient data weighted by along with fits (lines) for c-GaAs and a-GaN As at different compositions from As edge data. For amorphous samples, 50% of data points are shown to enhance clarity.

Image of FIG. 3.
FIG. 3.

Top: Magnitude of Fourier transform of χ() for c-GaAs and a-GaNAs for data (points) and fits (lines). Fitted region in -space was 1-4.8 Å for c-GaAs and 1.6–2.6 Å for a-GaNAs. For the amorphous sample, no EXAFS is detected beyond the first coordination shell. Bottom: Magnitude and real part of the Fourier transform of χ() for a-GaNAs to show quality of fit.

Image of FIG. 4.
FIG. 4.

Graphical representation of key structural parameters determined by EXAFS analysis for As atom local environment. The data points for the amorphous alloys are offset in the x-axis for clarity.

Image of FIG. 5.
FIG. 5.

EXAFS function data (points) extracted from absorption coefficient data weighted by along with fits (lines) for c-GaAs, c-GaN, and a-GaN As at different compositions from Ga edge data. For amorphous samples, 30% of data points are shown to enhance clarity.

Image of FIG. 6.
FIG. 6.

Magnitude and real part of Fourier transform of χ() for a-GaNAs for data (points) and fits (lines). Fitted region in -space was 0.8-3.1 Å. (Inset) Magnitude of Fourier transform of χ() for c-GaN for data (points) and fit (line). Fitted region in -space was 1.2–3.2 Å.

Image of FIG. 7.
FIG. 7.

Top: Graphical representation of Ga coordination number determined by EXAFS analysis for first nitrogen shell (squares) and first arsenic shell (circles). The coordination number shown is multiplied by the alloying content to determine the actual number of nitrogen or arsenic atoms bonded to a given Ga atom. Bottom: Graphical representation of Ga determined by EXAFS analysis for first nitrogen shell (squares) and first arsenic shell (circles). The results suggest that there are fewer dangling bonds and less bond length disorder due to nitrogen in the amorphous alloy. The data points for the amorphous alloys are offset in the x-axis for clarity.

Tables

Generic image for table
Table I.

Structural and statistical fit parameters from As edge data for As-Ga distance in c-GaAs, and a-GaN As at  = 20 K.  = 1.01.

Generic image for table
Table II.

Structural and statistical fit parameters from Ga edge data for Ga-N distance in c-GaN, and a-GaN As at  = 20 K.  = 0.63.

Generic image for table
Table III.

Structural and statistical fit parameters from Ga edge data for Ga-As distance in c-GaAs, and a-GaN As at  = 20 K. Statistical parameters listed in Table II .  = 0.63.

Loading

Article metrics loading...

/content/aip/journal/jap/113/24/10.1063/1.4812277
2013-06-27
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812277
10.1063/1.4812277
SEARCH_EXPAND_ITEM