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Coupled multiphysics, barrier localization, and critical radius effects in embedded nanowire superlattices
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10.1063/1.4812291
/content/aip/journal/jap/113/24/10.1063/1.4812291
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812291

Figures

Image of FIG. 1.
FIG. 1.

Modeling of the distributions of electron and hole densities in AlN/GaN/AlN superlattice. Upper panel shows the ground state wavefunctions and lower panel shows the first excited state wavefunctions. First and third columns show the results of 3-dimensional modeling in Cartesian coordinates, while second and fourth columns show the results of 2-dimensional modeling in cylindrical coordinates. Notice that the first excited states of electrons in the conduction band are degenerate.

Image of FIG. 2.
FIG. 2.

Same as Fig. 1 but radius of the nanowire is chosen as 2 nm. By comparing Figs. 1 and 2 , we clearly see the finite size effect on the localization of the distributions of electrons and holes wavefunctions.

Image of FIG. 3.
FIG. 3.

Several energy eigenvalues of the lowest conduction and valence band states as a function of radius in a cylindrical AlN/GaN/AlN NWSLs. Eigenvalues obtained from the cylindrically symmetric 3-dimensional model in Cartesian coordinates are in excellent agreement with the 2-dimensional model in cylindrical coordinates.

Image of FIG. 4.
FIG. 4.

Modeling of the distributions of electron and hole densities in three alternating layers of AlN/GaN superlattice. Upper panel shows the ground state wavefunctions and lower panel shows the first excited state wavefunctions.

Image of FIG. 5.
FIG. 5.

Several energy eigenvalues of the lowest conduction and valence band states as a function of radius in 2-dimensional cylindrical AlN/GaN/AlN NWSLs.

Image of FIG. 6.
FIG. 6.

Ground state energy eigenvalues vs radius of 2-dimensional cylindrical AlN/GaN/AlN NWSLs. Here, we compare the band structures of the NWSLs obtained from decoupled 2 conduction band and 6 valence band to that of 8-band Hamiltonian. Here, we chose = 1/2.

Image of FIG. 7.
FIG. 7.

(a) Strain tensor components for a AlN/GaN superlattice. (b) Piezoelectric field and piezoelectric potential for an AlN/GaN superlattice.

Image of FIG. 8.
FIG. 8.

Influence of piezo-electromechanical effects on the band structure calculations of wurtzite AlN/GaN supperllatice.

Image of FIG. 9.
FIG. 9.

Influence of piezo-electromechanical effects on the band structure calculations of wurtzite AlN/GaN supperllatice.

Image of FIG. 10.
FIG. 10.

Conduction band ground state (a) and valence band ground state (b) in symmetric AlGaN/GaN/AlGaN NWSL structures with Al mole fraction x = 0.01. Notice that the wavefunctions spread into the barrier material which indicates that the barrier material acts as an inversion layer.

Image of FIG. 11.
FIG. 11.

Subband energy levels of electrons and holes vs Al mole fraction in symmetric AlGaN/GaN/AlGaN NWSL structures.

Image of FIG. 12.
FIG. 12.

Ground state eigenvalues vs radius of cylindrical NWSLs or sidelength of square NWSLs. Notice that the localization of first excited state wavefunction in square symmetry (inset plot) is different than for the case in cylindrical symmetry (Fig. 1(a) lower panel).

Tables

Generic image for table
Table I.

Lattice parameters of wurtzite GaN and AlN used in computation. If not indicated differently, they are taken from Ref. . The dependence of the material constants for AlGaN/GaN on positions x is derived from the empirical expression according to Ref. .

Generic image for table
Table II.

Electron band structure parameters of wurtzite GaN and AlN used in computation. If not indicated differently, they are taken from Ref. . The dependence of the material constants for AlGaN/GaN on positions x is derived from the empirical expression according to Ref. .

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/content/aip/journal/jap/113/24/10.1063/1.4812291
2013-06-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coupled multiphysics, barrier localization, and critical radius effects in embedded nanowire superlattices
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812291
10.1063/1.4812291
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