Schematic diagram of the dislocation-templated amorphization of a GST nanowire under electric pulses. The color represents the dislocation density, i.e., the amorphization extent, with red meaning full amorphization.
Schematic diagram of the phase change with voltage.
(a) Temperature change of a GST nanowire under an electric voltage. Inset is the temperature evolution of a 100 nm-thick nanowire at the initial time of 1 μs, in which stage the experiments work. (b) Time required to reach 99% of the equilibrium temperature as a function of the applied voltage. GST nanowires with three representative thicknesses, d, are compared to show the size effect.
Temperature evolution of a nanowire under electric pulses. (a) Applied electric pulses and (b) the corresponding temperature evolution.
Peak temperature of a nanowire with respect to the duration of the applied electric pulse.
(a) Critical voltage and (b) critical current for the amorphization of nanowire under electric pulses.
Evolution of the average dislocation density in a nanowire under the electric pulses.
Temporal and spatial evolution of the average dislocation density in a 300 nm-thick nanowire under electric pulses.
Parameters and their values used in the present model.
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