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Optical constants and spatial uniformity of thermally grown oxide layer of custom, induced-junction, silicon photodiodes for a predictable quantum efficient detector
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10.1063/1.4812497
/content/aip/journal/jap/113/24/10.1063/1.4812497
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812497

Figures

Image of FIG. 1.
FIG. 1.

Oxide-layer thickness spatial uniformity of an S1337 (xx) photodiode. Z axis is the absolute thickness in nm, X and Y axis in cm.

Image of FIG. 2.
FIG. 2.

Oxide-layer thickness spatial uniformity of an S6337 photodiode. Zaxis is the absolute thickness in nm, X and Y axis in cm.

Image of FIG. 3.
FIG. 3.

Comparison of the relative difference Δn/n (top curve) in refractive index n, of thermally grown SiO (reported in Table IV ) and the values given by Philipp for glass. The difference in values between the modelled SiO refractive index (Table IV ) and the dispersion equation is shown by the bottom curve.

Image of FIG. 4.
FIG. 4.

Plot of the refractive index n of thermally grown SiO as expressed by the dispersion relation.

Image of FIG. 5.
FIG. 5.

Ψ and Δ plots of the experimental data used in determining n of the oxide layer of the PQED photodiodes. The dots represent the experimental data, while the coloured solid lines represent the fits at the 3 sampled angles. The MSE of the fit was 2.879.

Image of FIG. 6.
FIG. 6.

Oxide-layer thickness (100 nm nominal) spatial uniformity of an induced junction photodiode. Z axis is the absolute thickness in nm, X and Y axis in cm. Note that a data point from the back corner (outlier) was removed for the sake of clarity.

Image of FIG. 7.
FIG. 7.

Oxide-layer thickness (220 nm nominal) spatial uniformity of an induced junction photodiode. Z axis is the absolute thickness in nm, X and Y axis in cm.

Image of FIG. 8.
FIG. 8.

Oxide-layer thickness (300 nm nominal) spatial uniformity of induced-junction photodiode. Z axis is the absolute thickness in nm, X and Y axis in cm.

Tables

Generic image for table
Table I.

Model used for determining the SiO optical constants and layer thickness.

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Table II.

Results of the oxide layer spatial thickness measurement of Hamamatsu photodiodes.

Generic image for table
Table III.

Mean spatial oxide layer thickness of 2 photodiodes after cleaning with alcohol.

Generic image for table
Table IV.

Tabulated values of the refractive index n of thermally grown SiO. Note that the extinction coefficient k is identically zero from 300 nm to 1700 nm.

Generic image for table
Table V.

Tabulated values of the refractive index n of the Si-SiO interface layer. Note that the extinction coefficient k is identically zero from 300 nm to 1700 nm. Reprinted with the kind permission from J. A. Woollam Co., Inc., (J. A. Woollam Co., Inc., 1994–2010) Copyright 1994-2010 J. A. Woollam Co., Inc.

Generic image for table
Table VI.

Results for the spatial oxide layer thickness scan of the PQED photodiodes.

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/content/aip/journal/jap/113/24/10.1063/1.4812497
2013-06-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical constants and spatial uniformity of thermally grown oxide layer of custom, induced-junction, silicon photodiodes for a predictable quantum efficient detector
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/24/10.1063/1.4812497
10.1063/1.4812497
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