RBS spectra obtained from (a) Cu and (b) Cu-Ag films before and after 30 s of MW annealing showing the growth of thin copper oxide layer. The spectra were obtained using a 3.05 MeV He++ beam and a scattering angle of 8°.
AFM images of CuO thin films with: (a) 0 at. %, (b) 1 at. %, and (c) 3at. % and (d) 6 at. % of Ag doping.
XRD patterns showing (a) amorphous nature of the as-deposited films (b) growth of CuO after MW annealing.
Plot of CuO (−111) lattice spacing versus Ag content in the CuO films.
Plot of average crystallite size versus roughness of the CuO films. The solid line represents the linear fitting of the experimental data.
XPS spectra showing Cu 2p peaks for (a) as deposited and MW annealed Ag 6 at. % CuO sample (b). The deconvoluted peaks of Cu2+ (2p3/2) and Cu+(2p3/2) with binding energy peaks at 934.3 eV and 932.5 eV, respectively.
Comparison of the transmission spectra of CuO films with different Ag contents.
Tauc's plot to estimate the direct band gap of CuO and Ag doped CuO.
Tauc's plot to estimate the indirect band gap of CuO and Ag doped CuO.
Ag content in CuO as determined by Rutherford backscattering spectrometry and RUMP computer simulation and surface roughness as determined by atomic force microscopy.
Microstructural properties extracted from X-ray diffraction data for Ag doped CuO films on PEN.
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