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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
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/content/aip/journal/jap/113/3/10.1063/1.4775406
2013-01-15
2014-09-02

Abstract

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.

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Scitation: Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4775406
10.1063/1.4775406
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