(a) PL spectra of InGaN/GaN MQWs at different excitation fluences, and (b) PL peak energy as a function of excitation fluence at 4.5 K. Dots are experimental data, and dashed curve in (b) is for eye-guide purpose. The inset is simulated conduction band edges for QWs at three different excitation levels.
PL peak energy vs. fluence density, measured at room temperature. Solid curve was obtained after smoothing the lines connecting adjacent data points to show major features of the dependence.
(a) Time-integrated PL intensity and (b) linewidths of PL spectra as a function of excitation fluence density at the temperature of 4.5 K. Dots are experimental data, and dashed curves are for eye-guide purpose. The inset shows the PL integration under very low excitation fluence, and solid line is linear fitting for experimental data.
Arrhenius plots of time-integrated PL intensity for excitation fluence of (a) 13.9 μJ/cm2, (b) 0.28 mJ/cm2, and (c) 22.3 mJ/cm2. Dots are experimental data and solid curves are fitting results by using Eq. (1) . And (d) temperature-dependent PL spectra at excitation fluence of 22.3 mJ/cm2.
PL peak energy (left column) and linwidth of PL spectra (right column) as a funtion of temperature for three excitation levels. The corresponding excitation fluence is indicated in figures. Dashed curves were obtained after smoothing the lines connecting adjacent data points to show major features of the dependence.
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