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Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well
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10.1063/1.4775790
/content/aip/journal/jap/113/3/10.1063/1.4775790
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4775790

Figures

Image of FIG. 1.
FIG. 1.

(a) Surface SEM image of an uncapped Ga0.55In0.45As dot sample.The surface is tilted by 70° to enhance the height contrast. Reproduced with permission from A. Loffler, J.-P. Reithmaier, and A. Forchel, J. Cryst. Growth. 286, 6 (2006). Copyright 2012 Elsevier. (b) Schematic diagram of the geometrical shape of dots used in the calculation.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the elastic scattering process. In the x-y plane, β is the angle between the initial wave vector k and the x axis, is the scattering angle between k and k′ , is the angle between q and x axis, is polar angle between ρ and q , we can get and the angle between ρ and x axis equals to

Image of FIG. 3.
FIG. 3.

Calculated is plotted as a function of the 2DEG density n2D for different incidence angle of the initial wave vector k , where  = kF, l = 10 nm, r = 5 nm, h = 1.5 nm, and the position of the dots plane zdot is located at the well center, i.e., L∕2.

Image of FIG. 4.
FIG. 4.

Calculated anisotropic mobility is plotted as a function of the 2DEG density n2D. In this calculation, we choose l = 10 nm, r = 5 nm, h = 1.5 nm, and the dots plane position zdot = L∕2, where L is the QW width.

Image of FIG. 5.
FIG. 5.

Calculated anisotropic mobility is plotted as a function of the position of the dots plane zdot. In this calculation, we have chosen l = 10 nm, r = 5 nm, h = 1.5 nm, and the 2DEG density n2D 1 × 1012 cm−2.

Image of FIG. 6.
FIG. 6.

Anisotropic mobility ratio is plotted as a function of the 2DEG density n2D for different values of the length l and width r of the ellipsoid QDs. In this calculation, we have chosen h = 1.5 nm, and the dots plane position zdot = L∕2, where L is the QW width.

Tables

Generic image for table
Table I.

Parameters used in the theoretical calculation.

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/content/aip/journal/jap/113/3/10.1063/1.4775790
2013-01-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4775790
10.1063/1.4775790
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