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Deep levels generated by thermal oxidation in p-type 4H-SiC
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10.1063/1.4776240
/content/aip/journal/jap/113/3/10.1063/1.4776240
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4776240

Figures

Image of FIG. 1.
FIG. 1.

DLTS spectra for the as-grown p-type 4H-SiC (dashed line) before and after thermal oxidation at 1300 °C for 15.9 h (solid line).

Image of FIG. 2.
FIG. 2.

Depth profiles of HK0 center after oxidation at various temperatures for 1.3 h. Each symbol indicates the experimental data and each line indicates the calculated distribution obtained from Eqs. (1)–(5) .

Image of FIG. 3.
FIG. 3.

Depth profiles of the HK0 center after oxidation at 1300 °C for 1.3–15.9 h. Each symbol indicates the experimental data and each line indicates the calculated distribution obtained from Eqs. (1)–(5) .

Image of FIG. 4.
FIG. 4.

Depth profiles of the HK0 center after oxidation at 1150 °C for 1.3 h (closed triangles), and after the oxidation followed by Ar annealing at 1150 °C for 4.3 h (reverse triangles).

Image of FIG. 5.
FIG. 5.

Energy levels of carbon di-interstitial ((CI)2) obtained by ab initio calculation. 24,26,28

Image of FIG. 6.
FIG. 6.

DLTS spectra of the p-type 4 H-SiC after thermal oxidation at 1300 °C for 15.9 h (solid line), and after the oxidation followed by Ar annealing at 1500 °C for 2 h (dashed line). DLTS spectrum of the sample after thermal oxidation at 1400 °C for 16.5 h is also shown as a dotted line.

Image of FIG. 7.
FIG. 7.

DLTS spectra of the p-type 4 H-SiC irradiated with 150 keV electrons (solid line), and after electron irradiation followed by oxidation at 1150 °C for 1.3 h (dashed line).

Image of FIG. 8.
FIG. 8.

Depth profiles of (a) UK1 (circles), HS2 (triangles), and HK4 (rhombuses) centers in the p-type 4 H-SiC after electron irradiation (150 keV, ), and (b) HK0 (squares) and HK2 (reverse triangles) centers after irradiation followed by thermal oxidation at 1150 °C for 1.3 h.

Image of FIG. 9.
FIG. 9.

Depth profiles of the HK0 center in the p-type 4H-SiC after electron irradiation (150 keV, ) followed by thermal oxidation at different temperatures for 1.3 h.

Image of FIG. 10.
FIG. 10.

DLTS spectra of the p-type 4 H-SiC after C+ implantation followed by Ar annealing at 1300 °C (solid line is the signal obtained near the surface ( ), and dashed line in the deeper region) and 1500 °C (dotted line).

Image of FIG. 11.
FIG. 11.

Depth profiles of implanted atoms and carbon interstitials after C+ or Si+ implantation (total dose: ) simulated by SRIM code.

Image of FIG. 12.
FIG. 12.

Depth profiles of deep levels in the p-type 4 H-SiC after (a) C+ or (b) Si+ implantation (dose: ) followed by Ar annealing at 1300 °C for 20 min. A depth profile of carbon interstitials just after C+ implantation simulated by SRIM code is also shown as a solid line.

Image of FIG. 13.
FIG. 13.

Depth profiles of HK0 center in the p-type 4H-SiC after C+ (circles) and Si+ (triangles) implantation followed by Ar annealing at 1300 °C for 20 min. Depth profile of HK0 center in the sample oxidized at 1300 °C for 20 min is also shown as square symbols.

Tables

Generic image for table
Table I.

Parameter values obtained by fitting of the interstitial profiles calculated based on the diffusion equations (Eqs. (1)–(5) ) to experimental HK0 profiles shown in Fig. 1 . The top row indicates the “X” in the first column.

Generic image for table
Table II.

Deep levels observed in p-type 4H-SiC and the condition for generation and elimination. The suspected origins are also shown.

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/content/aip/journal/jap/113/3/10.1063/1.4776240
2013-01-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep levels generated by thermal oxidation in p-type 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4776240
10.1063/1.4776240
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