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Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption
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10.1063/1.4776741
/content/aip/journal/jap/113/3/10.1063/1.4776741
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4776741

Figures

Image of FIG. 1.
FIG. 1.

Scheme illustrating the segregation occurring during the sample growth. The orange layers represent the In-Ga monolayers.

Image of FIG. 2.
FIG. 2.

A representation of conduction and valence potential edges in a typical InGaAs/GaAs heterostructure, regarding the effect of In segregation (solid lines) and neglecting In segregation (dashed lines). In the upper panel, a schematic view of atomic composition (layer by layer) is depicted: the As atoms are not shown for clarity.

Image of FIG. 3.
FIG. 3.

Comparison of experimental and theoretical results. Triangles: null VBO bowing and r = 0.92; squares: null VBO bowing and r = 1.0; and circles: VBO bowing of −0.38 eV and r = 1.0. The dashed line represents the perfect calculation. All the experimental data was taken from Ref. 32 .

Image of FIG. 4.
FIG. 4.

Deviation of simulated results and experimental ones (Δ) as a function of growth temperature. The squares, circles, down triangles, diamonds, and triangles, are experimental data extracted, respectively, from Refs. 9, 32, and 68–70 .

Image of FIG. 5.
FIG. 5.

A comparison between experimental results and theoretical calculations for the QWs simulated before. All the points plotted here refer to the QWs grown at or . The convention for the symbols is the same of Figure 4 .

Image of FIG. 6.
FIG. 6.

Dependence of exciton binding energy (in absolute value) on indium nominal concentration by varying the segregation coefficient (dashed line: R = 0.00; dotted line: R = 0.80; solid line: R = 0.90). In each case, simulated QW had a width of 18 monolayers ( ).

Image of FIG. 7.
FIG. 7.

Dependence of exciton binding energy (in absolute value) on QW width by varying the segregation coefficient (dashed line: R = 0.00; dotted line: R = 0.80; solid line: R = 0.90). Indium nominal concentration was considered as .

Tables

Generic image for table
Table I.

Parameters of GaAs and InAs extracted from the review of Vurgaftman et al., 50 except the dielectric constant, which was taken from Ref. 71 .

Generic image for table
Table II.

Bowing coefficient for some InGaAs alloy parameters extracted from the review of Vurgaftman et al., 50 except the bowing for dielectric constant, which was taken from Ref. 71 .

Generic image for table
Table III.

VBO for InAs/GaAs heterostructure reported in the literature.

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/content/aip/journal/jap/113/3/10.1063/1.4776741
2013-01-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/3/10.1063/1.4776741
10.1063/1.4776741
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