Scheme illustrating the segregation occurring during the sample growth. The orange layers represent the In-Ga monolayers.
A representation of conduction and valence potential edges in a typical InGaAs/GaAs heterostructure, regarding the effect of In segregation (solid lines) and neglecting In segregation (dashed lines). In the upper panel, a schematic view of atomic composition (layer by layer) is depicted: the As atoms are not shown for clarity.
Comparison of experimental and theoretical results. Triangles: null VBO bowing and r = 0.92; squares: null VBO bowing and r = 1.0; and circles: VBO bowing of −0.38 eV and r = 1.0. The dashed line represents the perfect calculation. All the experimental data was taken from Ref. 32 .
Deviation of simulated results and experimental ones (Δ) as a function of growth temperature. The squares, circles, down triangles, diamonds, and triangles, are experimental data extracted, respectively, from Refs. 9, 32, and 68–70 .
A comparison between experimental results and theoretical calculations for the QWs simulated before. All the points plotted here refer to the QWs grown at or . The convention for the symbols is the same of Figure 4 .
Dependence of exciton binding energy (in absolute value) on indium nominal concentration by varying the segregation coefficient (dashed line: R = 0.00; dotted line: R = 0.80; solid line: R = 0.90). In each case, simulated QW had a width of 18 monolayers ( ).
Dependence of exciton binding energy (in absolute value) on QW width by varying the segregation coefficient (dashed line: R = 0.00; dotted line: R = 0.80; solid line: R = 0.90). Indium nominal concentration was considered as .
VBO for InAs/GaAs heterostructure reported in the literature.
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