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Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
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10.1063/1.4775817
/content/aip/journal/jap/113/4/10.1063/1.4775817
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4775817
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of plasma nitridation on the HfO2/IL (1.5 nm/1 nm) films at the high and low plasma power conditions: (a) spectra for N1s peaks including metastable N, N-Si, and N-Hf chemical states; (b) spectra for Si2p peaks including the Si-Si doublet peak from the substrate and the Si-O(N) peak form the IL.

Image of FIG. 2.
FIG. 2.

XPS N1s spectra of the low power plasma nitridation for the HfO2/IL films with different exposure times, including the as-deposited film, 10 s, 30 s, and 50 s of exposure times.

Image of FIG. 3.
FIG. 3.

Thickness of the HfO2/IL films at the low power plasma nitridation condition with different exposure times, which is derived based on the XPS Si2p and Hf4f spectra.

Image of FIG. 4.
FIG. 4.

XPS spectra of 10 s of PNA for the HfO2/IL films after the 40 s low power plasma nitridation process. The PNA temperatures are varied from 650 °C to 1000 °C. Metastable nitrogen is suppressed after the annealing (partly diffuses to the IL or is converted to N-Hf).

Image of FIG. 5.
FIG. 5.

Thickness of the HfO2/IL films after the 40 s low power plasma nitridation process at different PNA temperatures.

Image of FIG. 6.
FIG. 6.

Leakage current and EOT of the HfO2/IL film (N-MOSFET) with various combinations of plasma nitridation conditions and PNA (at 750 °C for 10 s): A-as-deposited HfO2, B-low power plasma nitridation, C-low power plasma nitridation and PNA, D-as-deposited HfO2 with anneal only, X-more aggressive higher power plasma nitridation and PNA.

Image of FIG. 7.
FIG. 7.

Normalized mobility and EOT of the HfO2/IL film (N-MOSFET) with various combinations of plasma nitridation conditions and PNA (at 750 °C for 10 s) as in Fig. 6 : A-as-deposited HfO2 on IL, B-film with low power plasma nitridation, C-film with low power plasma nitridation and PNA, D-film with anneal only, X-film with aggressive high power plasma nitridation and PNA.

Image of FIG. 8.
FIG. 8.

Normalized BTI data after nitridation for N-MOSFET (PBTI) and P-MOSFET (NBTI) (threshold voltage shift ΔVt after 1000 s, 125 °C at 1.25 V stress). The inset shows the PBTI of the HfO2 film after nitridation/PNA compared to that of the as-deposited HfO2 film, where plasma nitridation/PNA shows improved ΔVt at scaled EOT. When more nitrogen is added to the film, PBTI degrades following the EOT scaling trend. NBTI is generally degraded if nitrogen is added to the film.

Image of FIG. 9.
FIG. 9.

XPS N1s spectra for thermal nitridation of the HfO2/IL stacks by annealing in an NH3 ambient at (a) different temperatures (760 torr, 30 s); (b) different times (760 torr, 750 °C), and (c) different pressures (750 °C, 30s).

Image of FIG. 10.
FIG. 10.

XPS thickness of the HfO2/IL stacks after NH3 anneal at 750 °C when varying the anneal pressure. The plots on the top show the HfO2 thickness and the bottom plots show the IL thickness for 10 s and 30 s of NH3 anneal. The low pressure process drives less nitrogen to the IL.

Image of FIG. 11.
FIG. 11.

XPS thickness of the HfO2/IL stacks after NH3 anneal at different temperatures (760 torr, 10 s and 30 s of annealing time). The plots on the top show the HfO2 thickness and the bottom plots show the IL thickness. The IL thickness increases rapidly as the annealing temperature rises.

Image of FIG. 12.
FIG. 12.

SIMS analysis to compare the nitrogen profiles between plasma nitridation/PNA and thermal NH3 anneal on the same HfO2/IL stack. The two processes can be closely matched physically.

Image of FIG. 13.
FIG. 13.

Normalized DC performances (Ioff and Ieff) of N-MOSFET and P-MOSFET to compare plasma nitridation/PNA with thermal NH3 annealing, when both processes are physically matched (tuned based on SIMS and XPS).

Image of FIG. 14.
FIG. 14.

Normalized BTI data to compare plasma nitridation/PNA with thermal NH3 annealing, when both processes are physically matched (threshold voltage shift ΔVt after 1000 s, 125 °C at 1.55 V stress).

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/content/aip/journal/jap/113/4/10.1063/1.4775817
2013-01-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4775817
10.1063/1.4775817
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