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Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
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10.1063/1.4784065
/content/aip/journal/jap/113/4/10.1063/1.4784065
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4784065
/content/aip/journal/jap/113/4/10.1063/1.4784065
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/content/aip/journal/jap/113/4/10.1063/1.4784065
2013-01-22
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4784065
10.1063/1.4784065
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