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Electronic transport and shot noise in Thue-Morse sequence graphene superlattice
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10.1063/1.4788676
/content/aip/journal/jap/113/4/10.1063/1.4788676
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4788676
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic potential-energy profile through a TM sequence monolayer GSL.

Image of FIG. 2.
FIG. 2.

The transmission coefficient as a function of the incident angle for the TM sequence GSL at growth generations N = 2 (a), N = 3 (b), N = 4 (c), and N = 5 (d), respectively. The solid, short dashed, and dotted lines correspond to D 1 = 15 nm, 20 nm, and 25 nm, respectively. The relevant parameters are VA  = VB  = 50 meV, L = 15 nm, D 2 = 15 nm, and E = 15 meV.

Image of FIG. 3.
FIG. 3.

The transmission coefficient as a function of the incident angle for the TM sequence GSL at growth generations N = 2 (a), N = 3 (b), N = 4 (c), and N = 5 (d), respectively. The solid, short dashed, and dotted lines correspond to VA  = 40 meV, 50 meV, and 60 meV, respectively. The relevant parameters are VB  = 50 meV, L = 15 nm, D 1 = 15 nm, D 2 = 15 nm, and E = 15 meV.

Image of FIG. 4.
FIG. 4.

The transmission coefficient as a function of the incident energy for the TM sequence (N = 5) GSL with different barrier widths (a) and incident angles (b). In (a), , the solid, short dashed, and dotted lines correspond to the TM sequence GSL with D 1 = 15 nm, 20 nm, and 25 nm, respectively. In (b), D 1 = 20 nm, the solid, short dashed, and dotted lines correspond to , , and , respectively. The relevant parameters are VA  = VB  = 50 meV, L = 15 nm, and D 2 = 15 nm.

Image of FIG. 5.
FIG. 5.

The conductance as a function of the Fermi energy for the TM sequence GSL at growth generations N = 2 (a), N = 3 (b), N = 4 (c), and N = 5 (d), respectively. The solid, short dashed, and dotted lines correspond to D 1 = 15 nm, 20 nm, and 25 nm, respectively. The relevant parameters are VA  = VB  = 50 meV, L = 15 nm, and D 2 = 15 nm.

Image of FIG. 6.
FIG. 6.

The conductance as a function of the Fermi energy for the TM sequence GSL at growth generations N = 2 (a), N = 3 (b), N = 4 (c), and N = 5 (d), respectively. The solid, short dashed, and dotted lines correspond to VA  = 40 meV, 50 meV, and 60 meV, respectively. The relevant parameters are VB  = 50 meV, L = 15 nm, D 1 = 15 nm, and D 2 = 15 nm.

Image of FIG. 7.
FIG. 7.

The Fano factor as a function of the Fermi energy for the TM sequence GSL at growth generations N = 2 (a), N = 3 (b), N = 4 (c), and N = 5 (d), respectively. The solid, short dashed, and dotted lines correspond to D 1 = 15 nm, 20 nm, and 25 nm, respectively. The relevant parameters are VA  = VB  = 50 meV, L = 15 nm, and D 2 = 15 nm.

Image of FIG. 8.
FIG. 8.

The Fano factor as a function of the Fermi energy for the TM sequence GSL at growth generations N = 2 (a), N = 3 (b), N = 4 (c), and N = 5 (d), respectively. The solid, short dashed, and dotted lines correspond to VA  = 40 meV, 50 meV, and 60 meV, respectively. The relevant parameters are VB  = 50 meV, L = 15 nm, D 1 = 15 nm, and D 2 = 15 nm.

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/content/aip/journal/jap/113/4/10.1063/1.4788676
2013-01-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport and shot noise in Thue-Morse sequence graphene superlattice
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4788676
10.1063/1.4788676
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