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Divacancy-iron complexes in silicon
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10.1063/1.4788695
/content/aip/journal/jap/113/4/10.1063/1.4788695
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4788695
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Figures

Image of FIG. 1.
FIG. 1.

Spectra of DLTS measurements, with GS4 weighting function, on electron-irradiated Fe-contaminated and reference samples before and after annealing at 150, 200, and for 30 min. Three distinctive peaks, H(0.25), H(0.29), and H(0.34), are only found in the Fe-contaminated samples. These spectra are extracted from rate-window of (640 ms)−1.

Image of FIG. 2.
FIG. 2.

Evolution of the defect concentrations in Fe-contaminated (open symbol) and reference samples (filled symbol) to subsequent annealings of 30 min. Data from as-irradiated samples are plotted at annealing temperature of . “V2 + H(0.29) + H(0.34) − BiCs” is a result from adding the concentration of V2, H(0.29), and H(0.34) in the Fe-contaminated samples and subtracting B i C s from the reference samples.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of the three distinctive deep levels in Fe-contaminated samples and two additional sets of data for comparison. The data points for H(0.29) are extracted from the simulated DLTS spectra, partially shown in Fig. 4 , and compared with those of B i C s in the reference samples and from Ref. 7 .

Image of FIG. 4.
FIG. 4.

Experimental (Exp.) and simulated (Sim.) DLTS spectra for the H(0.25) and H(0.29) peaks between 120 to 150 K for rate window 1 (RW1) of (640 ms)−1 and rate window 2 (RW2) of (320 ms)−1.

Image of FIG. 5.
FIG. 5.

Concentration versus depth profiles of H(0.29) in the Fe-contaminated samples and the B i C s in the reference samples.

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/content/aip/journal/jap/113/4/10.1063/1.4788695
2013-01-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Divacancy-iron complexes in silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4788695
10.1063/1.4788695
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