REELS spectra of 100 nm PECVD a-SiO2 before and after Ar+ sputtering.
REELS spectra of 100 nm low-k a-SiOC:H thin films with k = 3.3, 3.05, and 2.8.
REELS spectra of 100 nm low-k a-SiOC:H thin films after Ar+ sputtering (a) k = 3.3, (b) k = 3.05, (c) k = 2.8.
REELS spectra of 100 nm porous (k = 2.3) a-SiOC:H thin film. (a) As deposited + UV cure/porogen removal, (b) after in-situ Ar+ sputtering, (c) after ex-situ plasma etching and ashing.
Band alignment for typical low-k ILD/Cu interconnect structure with energy position of defect states observed in this study.
Summary of properties for PECVD a-SiO2 and low-k a-SiOC:H thin films investigated in this study. RI = Refractive index at 673 nm.
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