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Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy
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10.1063/1.4788980
/content/aip/journal/jap/113/4/10.1063/1.4788980
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4788980

Figures

Image of FIG. 1.
FIG. 1.

REELS spectra of 100 nm PECVD a-SiO2 before and after Ar+ sputtering.

Image of FIG. 2.
FIG. 2.

REELS spectra of 100 nm low-k a-SiOC:H thin films with k = 3.3, 3.05, and 2.8.

Image of FIG. 3.
FIG. 3.

REELS spectra of 100 nm low-k a-SiOC:H thin films after Ar+ sputtering (a) k = 3.3, (b) k = 3.05, (c) k = 2.8.

Image of FIG. 4.
FIG. 4.

REELS spectra of 100 nm porous (k = 2.3) a-SiOC:H thin film. (a) As deposited + UV cure/porogen removal, (b) after in-situ Ar+ sputtering, (c) after ex-situ plasma etching and ashing.

Image of FIG. 5.
FIG. 5.

Band alignment for typical low-k ILD/Cu interconnect structure with energy position of defect states observed in this study.

Tables

Generic image for table
Table I.

Summary of properties for PECVD a-SiO2 and low-k a-SiOC:H thin films investigated in this study. RI = Refractive index at 673 nm.

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/content/aip/journal/jap/113/4/10.1063/1.4788980
2013-01-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4788980
10.1063/1.4788980
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