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Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam
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10.1063/1.4789010
/content/aip/journal/jap/113/4/10.1063/1.4789010
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4789010
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns measured for the ZnO before and after Si+ implantation and annealing.

Image of FIG. 2.
FIG. 2.

SE curves measured for the ZnO before and after Si+ implantation and annealing. The upper horizontal axis shows the mean implantation depth of positrons for each positron energy.

Image of FIG. 3.
FIG. 3.

S parameter in the implanted layer as a function of annealing temperature.

Image of FIG. 4.
FIG. 4.

SW correlation curves from the slow positron beam measurements in unimplanted ZnO, SiO2, and Si+-implanted ZnO after 700 °C annealing.

Image of FIG. 5.
FIG. 5.

Coincidence Doppler broadening ratio curves measured for SiO2 and Si+-implanted ZnO after 700 °C annealing. The reference sample is unimplanted ZnO.

Image of FIG. 6.
FIG. 6.

Raman scattering spectra measured for the ZnO before and after Si+ implantation and annealing.

Image of FIG. 7.
FIG. 7.

PL spectra measured for the ZnO before and after Si+ implantation and annealing.

Image of FIG. 8.
FIG. 8.

High resolution transmission electron diffraction images measured for Si+-implanted ZnO.

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/content/aip/journal/jap/113/4/10.1063/1.4789010
2013-01-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4789010
10.1063/1.4789010
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