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Metal-insulator-semiconductor tunnel emitter transistor as a spintronic device: a concept
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10.1063/1.4789386
/content/aip/journal/jap/113/4/10.1063/1.4789386
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4789386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Tunnel emitter transistor and its energy band diagram. The thick arrows in the right drawing show a direction of magnetization in the emitter and base metal (anti-parallel case). Current gain depends on the degree of asymmetry between the electron and hole tunneling.

Image of FIG. 2.
FIG. 2.

Comparison of a current flow picture in a field effect transistor and a tunnel MIS emitter transistor. Hole (h) tunneling into the metal is possible only if the base contact and emitter magnetizations are parallel, or if the spin-flip event has occurred. Electron (e) tunneling is always possible. “fm” denotes “ferromagnetic.”

Image of FIG. 3.
FIG. 3.

Evolution of the number of carriers with different spin gathering in the inversion layer under the base current step imposed at t = 0. The figures are for the two values of the tunneling time. There is always a coincidence of the N -curve for anti-parallel magnetizations and the N -curve for parallel. The positions of the N -curves “b” and “d” in the lower plot are close due to a short tunneling time τ0 D −1. Most important is a behavior at t → ∞.

Image of FIG. 4.
FIG. 4.

Evolution of the concentration of holes with different spin gathering in the inversion layer, of the insulator bias and the base-to-emitter voltage, and of the electron and hole tunneling currents. Simulations are performed for the Fe3Si/SiO2/n-Si MIS tunnel emitter transistor under the base current step imposed at t = 0. The cases of parallel and anti-parallel magnetizations of the emitter and base contacts are shown. Most important is a behavior at t → ∞.

Image of FIG. 5.
FIG. 5.

Evolution of the concentration of holes with different spin gathering in the inversion layer, of the insulator bias and the base-to-emitter voltage, and of the electron and hole tunneling currents. Simulations are performed for the Fe3Si/CaF2/n-Si MIS tunnel emitter transistor under the base current step imposed at t = 0.

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/content/aip/journal/jap/113/4/10.1063/1.4789386
2013-01-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-insulator-semiconductor tunnel emitter transistor as a spintronic device: a concept
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/4/10.1063/1.4789386
10.1063/1.4789386
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