No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2
) thin film
1. Z. Yang, M. K. Fah, K. A. Reynolds, J. D. Sexton, M. R. Riley, M.-L. Anne, B. Bureau, and P. Lucas, “ Opto-electrophoretic detection of bio-molecules using conducting chalcogenide glass sensors,” Opt. Express 18, 26754 (2010).
3. M. D. Pelusi, F. Luan, S. J. Madden, D.-Y. Choi, D. Bulla, B. Luther-Davies, and B. J. Eggleton, “ Chalcogenide glass chip based nonlinear signal processing—OSA Technical Digest (CD),” in Integrated Photonics Research, Silicon and Nanophotonics (Optical Society of America, 2010), p. IWC3.
5. C. Xiong, L. G. Helt, A. C. Judge, G. D. Marshall, M. J. Steel, J. E. Sipe, and B. J. Eggleton, “ Quantum-correlated photon pair generation in chalcogenide As2S3 waveguides,” Opt. Express 18, 16206 (2010).
7. S. Juodkazis, T. Kondo, and H. Misawa, “ Three-dimensional recording and structuring of chalcogenide glasses by femtosecond pulses,” Proc. SPIE 5662, 179–184 (2004).
9. M. I. Kozak, V. Y. Loya, N. P. Golub, and M. Y. Onis'ko, “ Mechanism of photoinduced nanodimensional expansion/contraction in glassy thin layers of As2S3,” Theor. Exp. Chem. 45, 69–73 (2009).
11. K. Tanaka, “ Photoinduced deformations in chalcogenide glasses: Scalar and vectorial,” J. Optoelectron. Adv. Mater. 7(5 ), 2571–2580 (2005).
12. J. Feinleib, J. P. DeNeufville, S. C. Moss, and S. R. Ovshinsky, “ Rapid reversible light-induced crystallization of amorphous semiconductors,” Appl. Phys. Lett. 18, 254 (1971).
14. I. Istvan, “ Photo- and ion-induced changes in amorphous chalcogenide films,” Ph.D. thesis (University of Debrecen, Hungary, 2007).
17. R. M. Kurtz, W. Lu, J. Piranian, T. Jannson, and A. O. Okorogu, “ The fast photorefractive effect and its application to vibrometry,” J. Hologr. Speckle 5, 149–155 (2009).
18. V. K. Tikhomirov and S. R. Elliott, “ The anisotropic photorefractive effect in bulk As2S3 glass induced by polarized subgap laser light,” J. Phys.: Condens. Matter 7(8 ), 1737 (1995).
19. M. Kowalyshen, “ Photoinduced dichroism in amorphous As2Se3 thin film,” Ph.D. thesis (University of Saskatchewan, Canada, 2010).
20. V. G. Ta'eed, M. R. E. Lamont, D. J. Moss, B. J. Eggleton, D.-Y. Choi, S. Madden, and B. Luther-Davies, “ All optical wavelength conversion via cross phase modulation in chalcogenide glass rib waveguides,” Opt. Express 14, 11242–11247 (2006).
21. V. Lyubin, M. Klebanov, M. Veinger, I. Lyubina, and B. Sfez, “ Photoluminescence and photostructural transformations in neodymium-doped glassy chalcogenide films,” Opt. Mater. 28, 1115–1117 (2006).
24. S. Simdyankin, S. Elliott, Z. Hajnal, T. Niehaus, and T. Frauenheim, “ Simulation of physical properties of the chalcogenide glass As2S3 using a density-functional-based tight-binding method,” Phys. Rev. B 69, 144202 (2004).
25. A. Andriesh, M. Iovu, and S. Shutov, Semiconducting Chalcogenide Glass II—Properties of Chalcogenide Glasses, 1st ed., Semiconductors and Semimetals, Vol. 79 (Elsevier, 2004).
27. T. Suhara, H. Nishihara, and J. Koyama, “ Electron-beam-induced refractive-index change of amorphous semiconductors,” Jpn. J. Appl. Phys., Part 1 14, 1079–1080 (1975).
29. N. Nordman and O. Nordman, “ Refractive index change caused by electron irradiation in amorphous AsS and AsSe thin films coated with different metals,” J. Appl. Phys. 90, 2206 (2001).
30. O. Nordman, N. Nordman, and V. Pashkevich, “ Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion,” J. Opt. Soc. Am. B 18, 1206 (2001).
32. J. Perrin, J. Cazaux, and P. Soukiassian, “ Optical constants and electronic structure of crystalline and amorphous As2S3 in the 3 to 35 eV range,” Phys. Status Solidi B 62, 343–350 (1974).
33. R. F. Egerton, Electron Energy Loss Spectroscopy in the Electron Microscope, 2nd ed. (Plenum, New York, 1996).
41. K. Hoffmann, Electron Energy Loss Spectroscopy as an Experimental Probe for the Crystal Structure and Electronic Situation of Solids (Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany, 2012).
42. J. Ramírez-Malo, E. Márquez, C. Corrales, P. Villares, and R. Jiménez-Garay, “ Optical characterization of As2S3 and As2Se3 semiconducting glass films of non-uniform thickness from transmission measurements,” Mater. Sci. Eng., B 25, 53–59 (1994).
43. O. Nordman, N. Nordman, and N. Peyghambarian, “ Electron beam induced changes in the refractive index and film thickness of amorphous As[sub x]S[sub 100x] and As[sub x]Se[sub 100x] films,” J. Appl. Phys. 84, 6055 (1998).
44. A. Kovalskiy, J. Neilson, A. Miller, F. Miller, M. Vlcek, and H. Jain, “ Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films,” Thin Solid Films 516, 7511–7518 (2008).
45. A. M. Nastas, A. M. Andriesh, V. V. Bivol, A. M. Prisakar, and G. M. Tridukh, “ Effect of electric field on photoinduced changes in the optical properties of chalcogenide glassy semiconductors,” Tech. Phys. Lett. 32, 45–47 (2006).
48. J. M. Lee, G. Pfeiffer, M. A. Paesler, D. E. Sayers, and A. Fontaine, “ Photon intensity-dependent darkening kinetics in optical and structural anisotropy in a-As2S3: A study of X-ray absorption spectroscopy,” J. Non-Cryst. Solids 114, 52–54 (1989).
49. H. Nishihara, Y. Handa, T. Suhara, and J. Koyama, “ Direct writing of optical gratings using a scanning electron microscope,” Appl. Opt. 17, 2342 (1978).
Article metrics loading...
In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of . Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by -thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method.
Full text loading...
Most read this month