The band alignment for a typical “W” type QW along with the ground state electron and hole wavefunctions.
Band edge energy positions (Ec and Ev ) of In0.53Ga0.47As and In0.52Ga0.48As, which are lattice matched to InP, and the GaAs1−xSbx pseudomorphic layer with Sb fraction varied from 0 to 1. The biaxial strain is indicated on the top horizon axis.
(a) The 3D contour plots of corresponding squared momentum matrix elements at three wavelengths: 2, 2.5, 3 μm, and (b) only at the 2.5 μm, based on the eight band k.p calculations of the “W” structure with variable parameters in three axes: InGaAs width along x axis, GaAsSb width along y axis, and Sb mole fraction along z axis.
The energy dispersion of the “W” QW consisting of In0.53Ga0.47As/GaAs1−xSbx/In0.53Ga0.47As (4/3/4 nm) sandwiched between In0.52Al0.48As barrier layers for the three cases with different Sb fraction: (a) xsb = 0.5, (b) xsb = 0.7, and (c) xsb = 0.9, where C1 and C2 refer to the symmetric and the anti-symmetric conduction subbands, HH1 and HH2 refer to the first and the second confined heavy hole subbands, and LH1 refers to the first confined light hole subband.
The squared momentum matrix element of the C1-HH1 transition for the three cases: (a) xsb = 0.5, (b) xsb = 0.7, and (c) xsb = 0.9.
The calculated TE material gain spectra for the three cases with 2D carrier densities of 1 × 1012, 2 × 1012, and 3 × 1012 cm−2.
The TE material gain peak value as a function of 2D carrier density for the three cases.
The parameters of the constituent materials in the “W” QW used for the k.p calculations.
The extracted values of the effective band gap, the energy differences of C1-C2 and HH1-LH1, and the C1 electron/HH1 hole effective masses at zone center for the three cases.
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