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Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon
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10.1063/1.4790178
/content/aip/journal/jap/113/5/10.1063/1.4790178
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/5/10.1063/1.4790178
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the twist boundary simulation model.

Image of FIG. 2.
FIG. 2.

GB configurations before and after the relaxation process, the atoms with deep color are of high potential energy.

Image of FIG. 3.
FIG. 3.

Typical temperature distribution at the twist boundary by the M-P method.

Image of FIG. 4.
FIG. 4.

Typical scattering of phonon wave packet signal in z coordinate direction

Image of FIG. 5.
FIG. 5.

Typical energy variation as phonon wave packet scatters at the interface. The left and right kinetic E means the energy of the phonon wave packet at each side of the grain boundary interface. The total potential E and total E mean the total potential energy and total energy (kinetic and potential energy) of the system during the scattering process.

Image of FIG. 6.
FIG. 6.

The twist boundary thermal resistance at different temperatures.

Image of FIG. 7.
FIG. 7.

The twist boundary thermal resistance at different GB energy and twist angle.

Image of FIG. 8.
FIG. 8.

Low and high frequency phonons scattering at twist boundary.

Image of FIG. 9.
FIG. 9.

The atom displacements in all three directions at the beginning and end of scattering.

Image of FIG. 10.
FIG. 10.

The transmission coefficient at different frequency and twist angle.

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/content/aip/journal/jap/113/5/10.1063/1.4790178
2013-02-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/5/10.1063/1.4790178
10.1063/1.4790178
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