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Effective electron mean free path in TiN(001)
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10.1063/1.4790136
/content/aip/journal/jap/113/6/10.1063/1.4790136
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790136
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Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction (a) ω-2θ scan, (b) ω-rocking curve from the TiN 002 reflection, (c) TiN-111 ϕ-scan at a tilt angle ψ = 54.7° and 2θ = 36.51°, and (d) HR RSM around the TiN 313 and MgO 313 peaks, from a 500-nm-thick TiN layer on MgO(001).

Image of FIG. 2.
FIG. 2.

(a) Measured and simulated x-ray reflectivity from a 8-nm-thick-TiN(001)/MgO(001) layer. (b) A typical RBS spectrum from an epitaxial 180-nm-thick TiN/MgO(001) layer. The solid line is the expected spectrum, as analyzed using the RUMP simulation program.

Image of FIG. 3.
FIG. 3.

Resistivity ρ of epitaxial TiN(001) layers versus layer thickness d at 298 K and 77 K. The solid lines represent the values calculated with Eq. (1) using λ = 45 and 217 nm.

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/content/aip/journal/jap/113/6/10.1063/1.4790136
2013-02-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective electron mean free path in TiN(001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790136
10.1063/1.4790136
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