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Effect of chiral property on hot phonon distribution and energy loss rate due to surface polar phonons in a bilayer graphene
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10.1063/1.4790309
/content/aip/journal/jap/113/6/10.1063/1.4790309
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790309

Figures

Image of FIG. 1.
FIG. 1.

Hot phonon distribution N q(ω 0) vs normalized in plane phonon wave vector q/q 0 for SiO2 substrate. Parameters used are ns  = 1 × 1016 m−2, τp  = 5 ps, and d = 0.4 nm. Solid (dashed) line represents N q(ω 0) with (without) chiral property.

Image of FIG. 2.
FIG. 2.

Hot phonon distribution N q(ω 0) vs normalized in plane phonon wave vector q/qo for τp  = 5 ps, d = 0.4 nm for SiO2 substrate at Te  = 300 K for different electron concentrations. Solid, dashed, dotted, and dash-dotted lines are for ns  = 1, 3, 5, 10 × 1016 m−2, respectively.

Image of FIG. 3.
FIG. 3.

Hot phonon distribution N q(ω 0) vs normalized in plane phonon wave vector q/qo for different d. Substrate is SiO2, τp  = 5 ps and Te  = 300 K. Inset: N q(ω 0) vs q/qo for SiC substrate. In both the figures solid line represents P without chirality for d = 0 nm. Dashed, dotted, and dash-dotted lines are with chirality for d = 0, 0.4, and 0.8 nm, respectively.

Image of FIG. 4.
FIG. 4.

(a) Energy loss rate P vs electron temperature Te showing the hot phonon effect for SiO2, SiC, and HfO2 substrates. Solid (dashed) line represents P with (without) hot phonon effect. Inset: Reduction factor α vs Te for SiO2, SiC and HfO2 substrates. Solid, dashed, and dotted lines correspond to SiO2, SiC, and HfO2 substrates, respectively. (b) Energy loss rate P vs electron temperature Te showing the hot phonon effect for AlN, Al2O3, and ZrO2 substrates. Solid (dashed) line represents P with (without) hot phonon effect. Inset: Reduction factor α vs Te for AlN, Al2O3, and ZrO2 substrates. Solid, dashed, and dotted line corresponds to AlN, Al2O3, and ZrO2 substrates.

Image of FIG. 5.
FIG. 5.

Energy loss rate P vs electron temperature Te showing the effect of chirality, with hot phonon effect (τp  = 5 ps) for SiO2, SiC, and HfO2 substrates. Solid (dashed) lines represent P with (without) chiral property.

Image of FIG. 6.
FIG. 6.

Energy loss rate P vs electron temperature Te for SiO2 substrate for different τp 's. Solid, dashed, dotted, dash-dotted, dash-double dotted, and short-dashed curves represent P for τp  = 0, 1, 2, 3, 4, and 5 ps, respectively.

Image of FIG. 7.
FIG. 7.

Energy loss rate P vs electron concentration ns for SiO2 substrate for different Te . Solid (dashed) line corresponds to with (without) hot phonon effect (τp  = 5 ps).

Tables

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Table I.

Surface polar phonon energies and dielectric constants in different dielectric substrates. 18

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/content/aip/journal/jap/113/6/10.1063/1.4790309
2013-02-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of chiral property on hot phonon distribution and energy loss rate due to surface polar phonons in a bilayer graphene
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790309
10.1063/1.4790309
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