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The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
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10.1063/1.4790311
/content/aip/journal/jap/113/6/10.1063/1.4790311
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790311

Figures

Image of FIG. 1.
FIG. 1.

AFM images of GaN pseudo-substrates with different miscuts: (a) 0°, (b) 0.2°, and (c) 0.5°. The image height (h) is 2.5 nm in each case. On each image the black arrows indicate approximately the [ ] direction.

Image of FIG. 2.
FIG. 2.

AFM images of approximately 2.5 nm thick InGaN epitaxial layers subjected to a 240 s growth interruption. The epilayers were grown on the GaN pseudo-substrates with different miscuts shown in Figure. 1 : (a) 0°, (b) 0.2°, and (c) 0.5°. h = 3.5 nm for (a) and (c) and h = 4.5 nm for (b). On each image the white arrows indicate approximately the [ ] direction. The inset in (b) shows a line scan along the white dotted line shown on the AFM data.

Image of FIG. 3.
FIG. 3.

The correlation between the trough spacing in the InGaN epilayers and the step spacing in the GaN pseudo-substrates on which they were grown for samples with three different miscuts.

Image of FIG. 4.
FIG. 4.

Histograms of the spacings of double steps on the GaN pseudo-substrate and troughs in the equivalent InGaN epilayer for substrate miscuts of (a) 0° and (b) 0.2°.

Tables

Generic image for table
Table I.

Nominal and measured miscuts for the GaN pseudo-substrates on which InGaN epilayers were grown.

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/content/aip/journal/jap/113/6/10.1063/1.4790311
2013-02-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/6/10.1063/1.4790311
10.1063/1.4790311
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