AFM images of GaN pseudo-substrates with different miscuts: (a) 0°, (b) 0.2°, and (c) 0.5°. The image height (h) is 2.5 nm in each case. On each image the black arrows indicate approximately the [ ] direction.
AFM images of approximately 2.5 nm thick InGaN epitaxial layers subjected to a 240 s growth interruption. The epilayers were grown on the GaN pseudo-substrates with different miscuts shown in Figure. 1 : (a) 0°, (b) 0.2°, and (c) 0.5°. h = 3.5 nm for (a) and (c) and h = 4.5 nm for (b). On each image the white arrows indicate approximately the [ ] direction. The inset in (b) shows a line scan along the white dotted line shown on the AFM data.
The correlation between the trough spacing in the InGaN epilayers and the step spacing in the GaN pseudo-substrates on which they were grown for samples with three different miscuts.
Histograms of the spacings of double steps on the GaN pseudo-substrate and troughs in the equivalent InGaN epilayer for substrate miscuts of (a) 0° and (b) 0.2°.
Nominal and measured miscuts for the GaN pseudo-substrates on which InGaN epilayers were grown.
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